Pseudomorphic and metamorphic quantum dot heterostructures for long-wavelength lasers on GaAs and Si

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 1171-1179

  Mi, Zetian ^a   Bhattacharya, Pallab ^b  

^a MCGILL UNIVERSITY   (Canada)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Metamorphic heterostructure; Molecular beam epitaxy (MBE); Monolithic integration; Optical communication; P doping; Quantum dot; Semiconductor laser; Si photonics; Thermal annealing; Tunnel injection

Indexed keywords

ANNEALING; CRYSTALS; ECOLOGY; EPITAXIAL GROWTH; GALLIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; LASERS; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

FUNDAMENTAL CHARACTERISTICS; GROWTH PARAMETERS; HETEROSTRUCTURES; IN SITU THERMAL ANNEALING; LONG WAVELENGTHS; LOW-TEMPERATURE GROWTH; METAMORPHIC HETEROSTRUCTURE; MOLECULAR BEAM EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY (MBE); MONOLITHIC INTEGRATION; OPTICAL COMMUNICATION; OPTICAL QUALITIES; P-DOPING; QUANTUM DOT; QUANTUM DOT LASERS; SEMICONDUCTOR LASER; SI PHOTONICS; THERMAL ANNEALING; TUNNEL INJECTION; ULTRA-LOW THRESHOLD;

SEMICONDUCTOR QUANTUM DOTS;

EID: 48949104546     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.923295     Document Type: Article

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