Small-signal modulation characteristics of p-doped 1.1- and 1.3-μm quantum-dot lasers

IEEE Photonics Technology Letters

Volumn 17, Issue 11, 2005, Pages 2250-2252

  Fathpour, Sasan ^a,b   Mi, Zetian ^a   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b Engineering IV   (United States)

Author keywords

Characteristics temperature; Modulation bandwidth; P doping; Quantum dot (QD) laser; Threshold current; Tunneling injection

Indexed keywords

BANDWIDTH; ELECTRIC CURRENTS; ELECTRON TUNNELING; HETEROJUNCTIONS; MODULATION; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL WAVEGUIDES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

CHARACTERISTICS TEMPERATURE; MODULATION BANDWIDTH; QUANTUM-DOT (QD) LASER; SMALL-SIGNAL MODULATION; THRESHOLD CURRENT; TUNNELING INJECTION;

SEMICONDUCTOR LASERS;

EID: 27744519741     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.857242     Document Type: Article

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