Electron transport due to inhomogeneous broadening and its potential impact on modulation speed in p-doped quantum dot lasers

Journal of Physics D: Applied Physics

Volumn 38, Issue 13, 2005, Pages 2119-2125

  Deppe, D G ^a   Freisem, S ^a   Huang, H ^a   Lipson, S ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GROUND STATE; MODULATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SPONTANEOUS EMISSION;

CARRIER LEAKAGE; CURRENT INJECTION; OPTICAL GAIN; QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 21044457521     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/13/007     Document Type: Article

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