Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers

IEEE Journal of Quantum Electronics

Volumn 39, Issue 8, 2003, Pages 952-962

  Bhattacharya, Pallab ^a   Ghosh, Siddhartha ^a   Pradhan, Sameer ^a   Singh, Jasprit ^a   Wu, Zong Kwei ^a   Urayama, J ^a   Kim, Kyoungsik ^a   Norris, Theodore B ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Carrier dynamics; High speed; Quantum dots; Semiconductor lasers

Indexed keywords

GROUND STATE; HETEROJUNCTIONS; MODULATION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

CARRIER DYNAMICS; DIFFERENTIAL TRANSMISSION SPECTROSCOPY; HIGH SPEED MODULATION; QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0043173950     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.814374     Document Type: Article

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