The role of Auger recombination in the temperature-dependent output characteristics (T 0 = ∞) of p-doped 1.3 μm quantum dot lasers

Applied Physics Letters

Volumn 85, Issue 22, 2004, Pages 5164-5166

  Fathpour, S ^a   Mi, Z ^a   Bhattacharya, P ^a   Kovsh, A R ^b   Mikhrin, S S ^b   Krestnikov, I L ^b   Kozhukhov, A V ^b   Ledentsov, N N ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b NL Nanosemiconductor GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; OUTPUT CHARACTERISTICS; THRESHOLD CURRENT; UNDOPED LASERS;

ELECTRIC CURRENTS; HETEROJUNCTIONS; HYDROSTATIC PRESSURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS; WAVEGUIDES;

LASERS;

EID: 11044225644     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1829158     Document Type: Article

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