GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

Journal of Crystal Growth

Volumn 223, Issue 4, 2001, Pages 466-483

  Koleske, D D ^a   Wickenden, A E ^a   Henry, R L ^a   Culbertson, J C ^a   Twigg, M E ^a  

^a Lab for Advanced Material Synthesis   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DECOMPOSITION; DESORPTION; DISSOCIATION; GALLIUM NITRIDE; GRAIN SIZE AND SHAPE; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PRESSURE EFFECTS; SEMICONDUCTOR GROWTH;

CLOSE-SPACED SHOWERHEAD REACTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035276219     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00617-0     Document Type: Article

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