Material properties of interfacial silicate layer and its influence on the electrical characteristics of MOS devices using hafnia as the gate dielectric

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 192-196

  Wong, Hei ^a   Sen, B ^a   Filip, V ^a   Poon, M C ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Dielectric film; Hafnium oxide; Interface properties; Reliability

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON TUNNELING; ENERGY GAP; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MOS DEVICES;

DIELECTRIC FILM; HAFNIUM OXIDE; INTERFACE PROPERTIES;

SILICON COMPOUNDS;

EID: 33644915272     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.123     Document Type: Conference Paper

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