High-quality SiO 2/GaN interface for enhanced operation field-effect transistor

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 6, 2007, Pages 2032-2036

  Niiyama, Yuki ^a   Shinagawa, Tatsuyuki ^a   Ootomo, Shinya ^a   Kambayashi, Hiroshi ^a   Nomura, Takehiko ^a   Yoshida, Seikoh ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE QUALITY; INTERFACE STATE DENSITY;

ANNEALING; GALLIUM NITRIDE; INTERFACES (MATERIALS); MOS CAPACITORS; SILICA;

FIELD EFFECT TRANSISTORS;

EID: 34547187169     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674844     Document Type: Conference Paper

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