Influence of polarity on GaN thermal stability

Journal of Crystal Growth

Volumn 274, Issue 1-2, 2005, Pages 38-46

  Mastro, M A ^a,c   Kryliouk, O M ^a   Anderson, T J ^a   Davydov, A ^b   Shapiro, A ^b  

^a University of Florida   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

A1. Decomposition; A1. Polarity; A1. Thermal stability; B1. Gallium nitride

Indexed keywords

DISSOCIATIVE SUBLIMATION; GASEOUS SPECIES; POLARITY; SURFACE PROCESSES;

ANNEALING; AUGER ELECTRON SPECTROSCOPY; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; PYROLYSIS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; THERMODYNAMIC STABILITY;

GALLIUM NITRIDE;

EID: 11044226374     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.091     Document Type: Article

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