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Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

Anomalous charge trapping dynamics in cerium oxide grown on germanium substrate

(5) Rahman, M S a Evangelou, E K a Dimoulas, A b Mavrou, G b Galata, S b

a UNIVERSITY OF IOANNINA (Greece)

b INSTITUTE OF MATERIALS SCIENCE (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHARGE TRAPPING; ELECTRIC FIELD EFFECTS; GERMANIUM; OXYGEN VACANCIES; VOLTAGE MEASUREMENT;

CAPTURE DYNAMICS; CONSTANT VOLTAGE STRESS (CVS); NEUTRAL TRAPS;

CERIUM COMPOUNDS;

EID: 41549131311 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2901214 Document Type: Article

Times cited : (22)

References (30)

1
- 0036806465
- EDLEDZ 0741-3106 10.1109/LED.2002.804029.
- W. J. Zhu, T. P. Ma, A. Zafar, and T. Tamagawa, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2002.804029 23, 597 (2002).
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 597
- Zhu, W.J.¹ Ma, T.P.² Zafar, A.³ Tamagawa, T.⁴

2
- 21544467967
- JAPIAU 0021-8979 10.1063/1.342824.
- D. J. DiMaria and J. K. Stasiak, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.342824 65, 2342 (2001).
- (2001) J. Appl. Phys. , vol.65 , pp. 2342
- Dimaria, D.J.¹ Stasiak, J.K.²

3
- 0032024519
- IETDAI 0018-9383 10.1109/16.661229.
- T. A. Ma, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.661229 45, 680 (1998).
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 680
- Ma, T.A.¹

4
- 0004005306
- 2nd ed. (Wiley, New York), Cha.
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap..
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

5
- 10944269095
- APPLAB 0003-6951 10.1063/1.1819994.
- C.-L. Cheng, L.-S. C. Liao, C.-H. Haung, and T.-K. Wang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1819994 85, 4723 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4723
- Cheng, C.-L.¹ Liao, L.-S.C.² Haung, C.-H.³ Wang, T.-K.⁴

6
- 33646891317
- MIGIEA 0927-796X 10.1016/j.mser.2006.04.001.
- M. Houssa, L. Pantiosano, L.-A. Ragnarsson, R. Degraeve, T. Schram, G. Pourtois, S. D. Gendt, G. Groeseneken, and M. M. Heyns, Mater. Sci. Eng., R. MIGIEA 0927-796X 10.1016/j.mser.2006.04.001 51, 37 (2006).
- (2006) Mater. Sci. Eng., R. , vol.51 , pp. 37
- Houssa, M.¹ Pantiosano, L.² Ragnarsson, L.-A.³ Degraeve, R.⁴ Schram, T.⁵ Pourtois, G.⁶ Gendt, S.D.⁷ Groeseneken, G.⁸ Heyns, M.M.⁹

7
- 33645528509
- in, edited by E. Zschech, C. Whelan, and T. Mikolajick (Springer-Verlag, London), Cha
- A. Dimoulas, in Materials for Information Technology, edited by, E. Zschech, C. Whelan, and, T. Mikolajick, (Springer-Verlag, London, 2005), Chap., pp. 3-15.
- (2005) Materials for Information Technology , pp. 3-15
- Dimoulas, A.¹

8
- 0039436914
- JAPIAU 0021-8979 10.1063/1.1385803.
- M. L. Green, E. P. Gousev, R. Degraeve, and E. Garufunkel, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1385803 90, 2057 (2001).
- (2001) J. Appl. Phys. , vol.90 , pp. 2057
- Green, M.L.¹ Gousev, E.P.² Degraeve, R.³ Garufunkel, E.⁴

9
- 0035872897
- JAPIAU 0021-8979 10.1063/1.1361065.
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065 89, 5243 (2001).
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

10
- 4243911194
- TDIMD5 0163-1918.
- E. P. Gusev, D. A. Burchanan, E. Cartier, A. Kimar, D. DiMaria, S. Ghuha, A. Callegari, S. Zafar, P. C. Jamison, D. A. Neumayer, M. Copel, M. A. Gribelyuk, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L.-A. Ragnarsson, P. Ronsheim, K. Rim, R. J. Rim, R. J. Fleming, A. Mocuta, and A. Ajmera, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2001, 451.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2001 , pp. 451
- Gusev, E.P.¹ Burchanan, D.A.² Cartier, E.³ Kimar, A.⁴ Dimaria, D.⁵ Ghuha, S.⁶ Callegari, A.⁷ Zafar, S.⁸ Jamison, P.C.⁹ Neumayer, D.A.¹⁰ Copel, M.¹¹ Gribelyuk, M.A.¹² Okorn-Schmidt, H.¹³ D'Emic, C.¹⁴ Kozlowski, P.¹⁵ Chan, K.¹⁶ Bojarczuk, N.¹⁷ Ragnarsson, L.-A.¹⁸ Ronsheim, P.¹⁹ Rim, K.²⁰ more..

11
- 0031256909
- EDLEDZ 0741-3106 10.1109/55.624911.
- H. S. Kim, S. A. Campbell, and D. C. Gilmer, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.624911 18, 465 (1997).
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 465
- Kim, H.S.¹ Campbell, S.A.² Gilmer, D.C.³

12
- 0036687234
- EDLEDZ 0741-3106 10.1109/LED.2002.801319.
- C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2002.801319 23, 473 (2002).
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 473
- Chui, C.O.¹ Ramanathan, S.² Triplett, B.B.³ McIntyre, P.C.⁴ Saraswat, K.C.⁵

13
- 34247585144
- THSFAP 0040-6090 10.1016/j.tsf.2006.11.129.
- A. Dimoulas, D. P. Brunco, S. Ferrari, J. W. Seo, Y. Panayiotatos, A. Sotiropoulos, T. Conrad, M. Caymax, S. Spiga, M. Fanciulli, Ch. Dieker, E. K. Evangelou, S. Galata, M. Houssa, and M. M. Heyns, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2006.11.129 515, 6337 (2007).
- (2007) Thin Solid Films , vol.515 , pp. 6337
- Dimoulas, A.¹ Brunco, D.P.² Ferrari, S.³ Seo, J.W.⁴ Panayiotatos, Y.⁵ Sotiropoulos, A.⁶ Conrad, T.⁷ Caymax, M.⁸ Spiga, S.⁹ Fanciulli, M.¹⁰ Dieker, Ch.¹¹ Evangelou, E.K.¹² Galata, S.¹³ Houssa, M.¹⁴ Heyns, M.M.¹⁵

14
- 0000302719
- APPLAB 0003-6951 10.1063/1.1415401.
- M. Houssa, V. V. Afanas'ev, A. Stesmans, and M. M. Heyns, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1415401 79, 3134 (2001).
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3134
- Houssa, M.¹ Afanas'Ev, V.V.² Stesmans, A.³ Heyns, M.M.⁴

15
- 0043013157
- JAPIAU 0021-8979 10.1063/1.1586985.
- A. Kumar, T. H. Ning, M. V. Fischetti, and E. P. Gusev, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1586985 94, 1728 (2003).
- (2003) J. Appl. Phys. , vol.94 , pp. 1728
- Kumar, A.¹ Ning, T.H.² Fischetti, M.V.³ Gusev, E.P.⁴

16
- 34247388523
- MCRLAS 0026-2714 10.1016/j.microrel.2007.01.023.
- S. F. Galata, E. K. Evangelou, Y. Panayiotatos, A. Sotiropoulos, and A. Dimoulas, Microelectron. Reliab. MCRLAS 0026-2714 10.1016/j.microrel.2007.01.023 47, 532 (2007).
- (2007) Microelectron. Reliab. , vol.47 , pp. 532
- Galata, S.F.¹ Evangelou, E.K.² Panayiotatos, Y.³ Sotiropoulos, A.⁴ Dimoulas, A.⁵

17
- 36348973641
- SSELA5 0038-1101 10.1016/j.sse.2007.09.029.
- A. Dimoulas, Y. Panayiotatos, A. Sotiropoulos, P. Tsipas, D. P. Brunco, G. Nicholas, J. Van Steenbergen, F. Bellenger, M. Houssa, M. Caymax, and M. Meuris, Solid-State Electron. SSELA5 0038-1101 10.1016/j.sse.2007.09.029 51, 1508 (2007).
- (2007) Solid-State Electron. , vol.51 , pp. 1508
- Dimoulas, A.¹ Panayiotatos, Y.² Sotiropoulos, A.³ Tsipas, P.⁴ Brunco, D.P.⁵ Nicholas, G.⁶ Van Steenbergen, J.⁷ Bellenger, F.⁸ Houssa, M.⁹ Caymax, M.¹⁰ Meuris, M.¹¹

18
- 0000254929
- JAPIAU 0021-8979 10.1063/1.361002.
- D. M. Fleetwood and N. S. Saks, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.361002 79, 1583 (1996).
- (1996) J. Appl. Phys. , vol.79 , pp. 1583
- Fleetwood, D.M.¹ Saks, N.S.²

19
- 0000954294
- JAPIAU 0021-8979 10.1063/1.373587.
- M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.373587 87, 8615 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 8615
- Houssa, M.¹ Tuominen, M.² Naili, M.³ Afanas'Ev, V.⁴ Stesmans, A.⁵ Haukka, S.⁶ Heyns, M.M.⁷

20
- 33645518426
- APPLAB 0003-6951 10.1063/1.2191736.
- V. V. Afanas'ev, S. Shamuilia, A. Stesmans, A. Dimoulas, Y. Panayiotatos, A. Sotiropoulos, M. Houssa, and D. P. Brunco, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2191736 88, 132111 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 132111
- Afanas'Ev, V.V.¹ Shamuilia, S.² Stesmans, A.³ Dimoulas, A.⁴ Panayiotatos, Y.⁵ Sotiropoulos, A.⁶ Houssa, M.⁷ Brunco, D.P.⁸

21
- 0038650830
- JAPIAU 0021-8979 10.1063/1.1570933.
- S. Zafar, A. Callegari, E. P. Gusev, and M. V. Fischetti, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1570933 93, 9298 (2003).
- (2003) J. Appl. Phys. , vol.93 , pp. 9298
- Zafar, S.¹ Callegari, A.² Gusev, E.P.³ Fischetti, M.V.⁴

22
- 1642603065
- MIENEF 0167-9317 10.1016/j.mee.2004.01.003.
- E. P. Gusev, C. D'Emic, S. Zafar, and A. Kumar, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2004.01.003 72, 273 (2004).
- (2004) Microelectron. Eng. , vol.72 , pp. 273
- Gusev, E.P.¹ D'Emic, C.² Zafar, S.³ Kumar, A.⁴

23
- 0004071496
- See, for example, 3rd ed. (Wiley-Interscience, New York).
- See, for example, D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley-Interscience, New York, 2006).
- (2006) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

24
- 0942299243
- APPLAB 0003-6951 10.1063/1.1633332.
- E. P. Gusev and C. P. D'Emic, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1633332 83, 5223 (2003).
- (2003) Appl. Phys. Lett. , vol.83 , pp. 5223
- Gusev, E.P.¹ D'Emic, C.P.²

25
- 0004277486
- (Wiley, New York).
- E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
- (1982) MOS Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

26
- 33846642656
- MCRLAS 0026-2714 10.1016/j.microrel.2006.05.006.
- C. Petit and D. Zander, Microelectron. Reliab. MCRLAS 0026-2714 10.1016/j.microrel.2006.05.006 47, 401 (2007).
- (2007) Microelectron. Reliab. , vol.47 , pp. 401
- Petit, C.¹ Zander, D.²

27
- 0001716170
- APPLAB 0003-6951 10.1063/1.1290138.
- M. Houssa, A. Steasmans, M. Naili, and M. M. Heyns, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1290138 77, 1381 (2000).
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1381
- Houssa, M.¹ Steasmans, A.² Naili, M.³ Heyns, M.M.⁴

28
- 0000842547
- APPLAB 0003-6951 10.1063/1.121918.
- M. Houssa, T. Nigam, P. W. Mertens, and M. M. Heyns, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.121918 73, 514 (2000).
- (2000) Appl. Phys. Lett. , vol.73 , pp. 514
- Houssa, M.¹ Nigam, T.² Mertens, P.W.³ Heyns, M.M.⁴

29
- 1642603065
- MIENEF 0167-9317 10.1016/j.mee.2004.01.003.
- E. P. Gusev, C. D. Emic, S. Zafar, and A. Kumar, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2004.01.003 72, 273 (2004).
- (2004) Microelectron. Eng. , vol.72 , pp. 273
- Gusev, E.P.¹ Emic, C.D.² Zafar, S.³ Kumar, A.⁴

30
- 34248649079
- MIENEF 0167-9317 10.1016/j.mee.2007.04.025.
- M. Jo, H. Park, M. Chang, H. S. Jung, J. H. Lee, and H. Hwang, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2007.04.025 84, 1935 (2007).
- (2007) Microelectron. Eng. , vol.84 , pp. 1935
- Jo, M.¹ Park, H.² Chang, M.³ Jung, H.S.⁴ Lee, J.H.⁵ Hwang, H.⁶

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