GaN thermal decomposition in N2 AP-MOCVD environment

Semiconductor Science and Technology

Volumn 23, Issue 12, 2008, Pages

  Bchetnia, A ^a   Kemis, I ^a   Toure A ^a   Fathallah, W ^a   Boufaden, T ^a   Jani, B El ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CORUNDUM; DECOMPOSITION; GALLIUM NITRIDE; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; PHOTORESISTS; PYROLYSIS; REFLECTION; REFLECTOMETERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SILICON NITRIDE; SULFUR COMPOUNDS; THERMOGRAVIMETRIC ANALYSIS;

GAN LAYERS; IN SITU LASER REFLECTOMETRY; METAL ORGANIC; SAPPHIRE SUBSTRATES; SURFACE FILMS; TEMPERATURE RANGES; THERMAL ANNEALING; THERMAL DECOMPOSITIONS; VERTICAL REACTORS;

GALLIUM ALLOYS;

EID: 58149473449     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/12/125025     Document Type: Article

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