Effect of proton irradiation on interface state density in Sc 2O 3/GaN and Sc 2O 3/MgO/GaN diodes

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 519-523

  Allums, K K ^a   Hlad, M ^a   Gerger, A P ^a   Gila, B P ^a   Abernathy, C R ^a   Pearton, S J ^a   Ren, F ^a   Dwivedi, R ^b   Fogarty, T N ^b   Wilkins, R ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b PRAIRIE VIEW A AND M UNIVERSITY   (United States)

Author keywords

Diodes; GaN; Radiation

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTICS; INTERFACE STATE DENSITIES; VOLTAGE SHIFTS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; MOS DEVICES; PROTON IRRADIATION; SURFACE ROUGHNESS;

SEMICONDUCTOR DIODES;

EID: 34249091763     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0035-y     Document Type: Conference Paper

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