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Japanese Journal of Applied Physics

Volumn 48, Issue 2, 2009, Pages

Electrical properties of AI/HfO2/n-GaN prepared by reactive sputtering method

(5) Shih, Chuan Feng a Li, Wei Min a Shu, Shu Chun a Hsiao, Chu Yun a Hung, Kuang Teng a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOS CAPACITORS; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

AS DOPING; C-V CURVES; DIELECTRIC CONSTANTS; DOPED SAMPLES; DOPING CONCENTRATIONS; EFFECTIVE OXIDE CHARGES; EFFECTIVE OXIDE THICKNESS; ELECTRICAL PROPERTIES; FLAT-BAND VOLTAGE SHIFTS; INTERFACE DENSITIES; METAL-OXIDE SEMICONDUCTORS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOS-HFETS; REACTIVE SPUTTERING METHODS; X-RAY ROCKING CURVES;

FIELD EFFECT TRANSISTORS;

EID: 60849125415 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.020224 Document Type: Article

Times cited : (3)

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