Effects of NO annealing and GaOxNy interlayer on GaN metal-insulator-semiconductor capacitor with SiO2 gate dielectric

Journal of the Electrochemical Society

Volumn 154, Issue 3, 2007, Pages

  Lin, L M ^a   Lai, P T ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DEPOSITION; GALLIUM NITRIDE; MASS SPECTROMETRY; MISFET DEVICES; SECONDARY ION MASS SPECTROMETRY;

CONDUCTION BANDEDGE; GATE DIELECTRICS; INTERLAYERS; RADIO FREQUENCY SPUTTERING;

NITROGEN OXIDES;

EID: 33846956156     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2429043     Document Type: Article

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