Structural and electrical characterizations of the pulsed-laser-deposition- grown Sc2O3/GaN heterostructure

Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

  Liu, Chang ^a   Chor, Eng Fong ^a   Tan, Leng Seow ^a   Dong, Yufeng ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOS DEVICES; SAPPHIRE; SCANDIUM COMPOUNDS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROINTERFACE; REVERSE GATE BIAS; SAPPHIRE TEMPLATE; VALENCE BAND;

PULSED LASER DEPOSITION;

EID: 33744801086     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2209178     Document Type: Article

References (14)

1. S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, and M. Umeno, Appl. Phys. Lett. 73, 809 (1998).
2. F. Ren, M. Hong, S. N. G. Chu, M. A. Marcus, M. J. Schurman, A. Baca, S. J. Pearton, and C. R. Abernathy, Appl. Phys. Lett. 73, 3893 (1998).
3. H. C. Casey, Jr., G. G. Fountain, R. G. Alley, B. P. Keller, and S. P. Denbarrs, Appl. Phys. Lett. 68, 1850 (1996).
4. K. Balachander, S. Arulkumaran, T. Egawa, Y. Sano, and K. Baskar, Mater. Sci. Eng., B 119, 36 (2005).
5. T. Hashizume, S. Ootomo, and H. Hasegawa, Phys. Status Solidi C 0, 2380 (2003).
6. J. Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, and Y. Irokawa, Appl. Phys. Lett. 80, 4555 (2002).
7. R. Mehandru, B. P. Gila, J. Kim, J. W. Johnson, K. P. Lee, B. Luo, A. H. Onstine, C. R. Abernathy, S. J. Pearton, and F. Ren, Electrochem. Solid-State Lett. 5, G51 (2002).
8. B. P. Gila, J. W. Johnson, R. Mehandru, B. Luo, A. H. Onstine, K. K. Allums, V. Krishnamoorthy, S. Bates, C. R. Abernathy, F. Ren, and S. J. Pearton, Phys. Status Solidi A 188, 239 (2001).
9. J. Kuzmik, G. Konstantinidis, S. Harasek, Š. Hašcik, E. Bertagnolli, A. Georgakilas, and D. Pogany, Semicond. Sci. Technol. 19, 1364 (2004).
10. V. N. Abramov, A. N. Ermoshkin, and A. I. Kuznetsov, Sov. Phys. Solid State 25, 981 (1983).
11. E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. Lett. 44, 1620 (1980).
12. S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, and K. Eisenbeiser, Appl. Phys. Lett. 77, 1662 (2000).
13. J. R. Waldrop and R. W. Grant, Appl. Phys. Lett. 68, 2879 (1996).
14. L. M. Terman, Solid-State Electron. 5, 285 (1962).