Ab initio calculation for the decomposition process of GaN (0 0 0 1) and (0 0 0 1̄) surfaces

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1632-1636

  Suzuki, Hikari ^a   Togashi, Rie ^a   Murakami, Hisashi ^a   Kumagai, Yoshinao ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Computer simulation; A1. Desorption; A1. Surface processes; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ACTIVATION ENERGY; DECOMPOSITION; DESORPTION; NITRIDES; VAPOR PHASE EPITAXY;

AB INITIO CALCULATION; SURFACE PROCESSES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 41449105570     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.167     Document Type: Article

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