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Japanese Journal of Applied Physics

Volumn 41, Issue 12B, 2002, Pages L1437-L1439

Electrical properties of gallium oxide grown by photoelectrochemical oxidation of GaN epilayers

(2) Fu, Dejun a Kang, Tae Won a

a Dongguk University (South Korea)

Author keywords

Electrical properties; GaN; Metal oxide semiconductor; Oxidation; Photoelectrochemical

Indexed keywords

CAPACITANCE; CAPACITORS; CHARGE INJECTION; DIELECTRIC DEVICES; ELECTRIC PROPERTIES; ELECTROCHEMISTRY; ELECTROLYTIC CAPACITORS; GALLIUM NITRIDE; INTERFACE STATES; METALLIC COMPOUNDS; METALS; MOS DEVICES; OXIDATION; PHOTOELECTROCHEMICAL CELLS; TRANSISTORS;

CAPACITANCE VOLTAGE; CURRENT VOLTAGE MEASUREMENT; DENSITY OF INTERFACE STATE; GAN; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE- SEMICONDUCTORCAPACITORS; PHOTO-ELECTROCHEMICAL OXIDATIONS; PHOTOELECTROCHEMICALS;

MOS CAPACITORS;

EID: 33645532960 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.41.L1437 Document Type: Article

Times cited : (22)

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