Theoretical investigation on the decomposition process of GaN(0 0 0 1) surface under a hydrogen atmosphere

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 3103-3105

  Suzuki, Hikari ^a   Togashi, Rie ^a   Murakami, Hisashi ^a   Kumagai, Yoshinao ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Computer simulation; A1. Desorption; A1. Surface processes; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

A1. COMPUTER SIMULATION; A1. DESORPTION; A1. SURFACE PROCESSES; A3. VAPOR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING GALLIUM COMPOUNDS;

ACTIVATION ENERGY; ATOMS; COMPUTER SIMULATION; CRYSTAL GROWTH; DENSITY FUNCTIONAL THEORY; DESORPTION; GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROGEN; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SULFUR COMPOUNDS; VAPOR PHASE EPITAXY; VAPORS;

SURFACE STRUCTURE;

EID: 65749119205     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.096     Document Type: Article

References (8)

1. Mayumi M., Satoh F., Kumagai Y., Takemoto K., and Koukitu A. J. Cryst. Growth 237-239 (2002) 1143
2. Koukitu A., Mayumi M., and Kumagai Y. J. Cryst. Growth 246 (2002) 230
3. Suzuki H., Togashi R., Murakami H., Kumagai Y., and Koukitu A. J. Cryst. Growth 310 (2008) 1632
4. Suzuki H., Togashi R., Murakami H., Kumagai Y., and Koukitu A. Jpn. J. Appl. Phys. 46 (2007) 5112
5. Van de Walle C.G., and Neugebauer J. J. Cryst. Growth 248 (2003) 8
6. Hammer B., Hansen L.B., and Nørskov J.K. Phys. Rev. B 59 (1999) 7413
7. Delley B. J. Chem. Phys. 92 (1990) 508
8. Delley B. J. Chem. Phys. 113 (2000) 7756