Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

Journal of Applied Physics

Volumn 102, Issue 7, 2007, Pages

  Craft, H S ^a   Collazo, R ^a   Losego, M D ^a   Mita, S ^a   Sitar, Z ^a   Maria, J P ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; DIELECTRIC DEVICES; FERROELECTRIC MATERIALS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND OFFSETS; THREE-DIMENSIONAL GROWTH MODE; VALENCE BAND OFFSET; VOLMER-WEBER (THREE-DIMENSIONAL) MODE;

MAGNESIA;

EID: 35348866770     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2785022     Document Type: Article

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