Surface analysis of GaN decomposition

Semiconductor Science and Technology

Volumn 17, Issue 12, 2002, Pages 1223-1225

  Choi, H W ^a   Rana, M A ^a   Chua, S J ^a,b   Osipowicz, T ^a   Pan, J S ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DECOMPOSITION; DEGRADATION; DROP FORMATION; MORPHOLOGY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE DEFECTS;

GALLIUM NITRIDE;

EID: 0036903688     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/12/304     Document Type: Article

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