Studies of highly oriented CeO2 films grown on Si(111) by pulsed laser deposition

Thin Solid Films

Volumn 348, Issue 1, 1999, Pages 3-7

  Hirschauer, B ^a   Chiaia, G ^b   Gothelid M ^a   Karlsson, U O ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; HIGH TEMPERATURE SUPERCONDUCTORS; INTERFACES (MATERIALS); LASER ABLATION; PULSED LASER APPLICATIONS; STOICHIOMETRY; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CERIUM OXIDE; HEAT DIFFUSION; LATTICE MATCHING;

CERIUM COMPOUNDS;

EID: 0032630359     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01759-3     Document Type: Article

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