Effect of annealing on GaN metal-insulator-semiconductor capacitors by using liquid-phase-deposition SiO2

Electrochemical and Solid-State Letters

Volumn 12, Issue 3, 2009, Pages

  Hwang, J D ^a   Lin, D C ^b  

^a NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^b DA YEH UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; ANNEALING; CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; GALLIUM ALLOYS; GALLIUM NITRIDE; METAL INSULATOR BOUNDARIES; MIS DEVICES; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SWITCHING CIRCUITS; VACANCIES;

ANNEALED SAMPLES; ANNEALING TEMPERATURES; INTERFACE TRAP DENSITIES; MIS CAPACITORS; PHASE DEPOSITIONS; SEMI-CONDUCTORS; SEMICONDUCTOR CAPACITORS;

METAL ANALYSIS;

EID: 58149479699     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3046004     Document Type: Article

References (17)

1. F. Ren, M. Hong, S. N. G. Chu, M. A. Marcus, M. J. Schurman, A. Baca, S. J. Pearton, and C. R. Abernathy, Appl. Phys. Lett., 73, 3893 (1998).
2. M. A. Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, and M. S. Shur, Appl. Phys. Lett., 77, 1339 (2000).
3. Y. Nakano and T. Jimbo, Appl. Phys. Lett., 82, 218 (2003).
4. R. Nakasaki, T. Hashizume, and H. Hasegawa, Physica E (Amsterdam), 7, 953 (2000).
5. K. Matocha, R. J. Gutmann, and T. P. Chow, IEEE Trans. Electron Devices, 50, 1200 (2003).
6. C. B. Vartuli, S. J. Pearton, C. R. Abernathy, J. D. Mackenzie, E. S. Lambers, and J. C. Zolper, J. Vac. Sci. Technol. B, 14, 3523 (1996).
7. E. D. Readinger, S. D. Wolter, D. L. Waltemyer, J. M. DeLucca, S. E. Mohney, B. I. Prentitzer, L. A. Giannuzzi, and R. J. Molnar, J. Electron. Mater., 28, 257 (1999).
8. M. K. Lee, C. L. Ho, and J. Y. Zeng, Electrochem. Solid-State Lett., 11, D9 (2008).
9. D. W. Chou, K. W. Lee, J. J. Huang, H. R. Wu, Y. H. Wang, M. P. Houng, S. J. Chang, and Y. K. Su, Jpn. J. Appl. Phys., Part 2, 41, L748 (2002).
10. Y. Niiyama, T. Shinagawa, S. Ootomo, H. Kambayashi, T. Nomura, and S. Yoshida, Phys. Status Solidi A, 204, 2032 (2007).
11. G. H. Yang, J. D. Hwang, C. H. Lan, C. M. Chan, H. Z. Chen, and S. J. Chang, Jpn. J. Appl. Phys., Part 1, 46, 5119 (2007).
12. J. D. Hwang, G. H. Yang, Y. Y. Yang, and P. C. Yao, Jpn. J. Appl. Phys., Part 1, 44, 7913 (2005).
13. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, p. 487, John Wiley & Sons, New York (2003).
14. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, p. 332, John Wiley & Sons, New York (2003).
15. D. S. Kim, J. Lee, and K. Char, Appl. Phys. Lett., 87, 042107 (2005).
16. C. J. Huang, M. P. Houng, Y. H. Wang, N. F. Wang, and J. R. Chen, J. Vac. Sci. Technol. A, 16, 2646 (1998).
17. C. F. Yeh, D. C. Chen, C. Y. Lu, C. Liu, S. T. Lee, C. H. Liu, and T. J. Chen, Tech. Dig.-Int. Electron Devices Meet., 1998, 269.