Gallium droplet formation during MOVPE and thermal annealing of GaN

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 22-24

  Karpov, S Yu ^a   Bord, O V ^b   Talalaev, R A ^a   Makarov, Yu N ^c  

^a SOFT IMPACT LTD   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Annealing; Metal droplets; Nitrides; Thermal stability

Indexed keywords

ADSORPTION; ANNEALING; DESORPTION; DROP FORMATION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; REACTION KINETICS; SEMICONDUCTOR DEVICE MODELS; THERMODYNAMIC STABILITY;

METAL DROPLETS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035933172     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00784-4     Document Type: Article

References (10)