Low temperature epitaxial growth of CeO2(110) layers on Si(100) using electron beam assisted evaporation

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 594-597

  Inoue, Tomoyasu ^a   Yamamoto, Yasuhiro ^b   Satoh, Masataka ^b  

^a IWAKI MEISEI UNIVERSITY   (Japan)

^b HOSEI UNIVERSITY   (Japan)

Author keywords

Cerium; Epitaxy; Evaporation; Oxides; Silicon

Indexed keywords

CERIUM COMPOUNDS; ELECTRON BEAMS; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; EVAPORATION; OXIDES; SEMICONDUCTING SILICON; VACUUM APPLICATIONS;

CERIUM DIOXIDE; ELECTRON-BEAM EVAPORATION;

ELECTRIC INSULATING COATINGS;

EID: 0032686177     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0040-6090(99)00120-0     Document Type: Article

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