Review and future prospects of low-voltage RAM circuits

IBM Journal of Research and Development

Volumn 47, Issue 5-6, 2003, Pages 525-552

  Nakagome, Yoshinobu ^a   Horiguchi, Masashi ^a   Kawahara, Takayuki ^b   Itoh, Kiyoo ^b  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EMBEDDED SYSTEMS; ENERGY DISSIPATION; LEAKAGE CURRENTS; LOGIC CIRCUITS; LSI CIRCUITS; MINICOMPUTERS; MOBILE COMPUTING; MOSFET DEVICES; SENSORS; STANDBY POWER SYSTEMS; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE;

DEVICE MINIATURIZATION; PERIPHERAL CIRCUITS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0346267670     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.475.0525     Document Type: Conference Paper

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