Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

IEEE Electron Device Letters

Volumn 18, Issue 2, 1997, Pages 74-76

  Auth, Christopher P ^a,b   Plummer, James D ^a,b  

^a IEEE   (United States)

^b Stanford University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; GATES (TRANSISTOR); MATHEMATICAL MODELS; PERMITTIVITY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICA;

POISSON EQUATION; SCALING THEORY; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0031079417     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.553049     Document Type: Article

References (13)

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