A 256kb 3.0V 1T1MTJ nonvolatile magnetoresistive RAM

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2001, Pages 122-123+438

  Naji, P K ^a   Durlam, M ^a   Tehrani, S ^a   Calder, J ^a   DeHerrera, M F ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; MAGNETORESISTANCE; NONVOLATILE STORAGE; POLARIZATION;

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM);

RANDOM ACCESS STORAGE;

EID: 0035054710     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Nonvolatile RAM based on magnetic tunnel junction elements
2. A 10ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell
3. Recent developments in magnetic tunnel junction MRAM