Low-power SRAM using improved charge transfer sense amplifiers and a dual-Vth CMOS circuit scheme

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 1998, Pages 142-145

  Fukushi, Isao ^a   Sasagawa, Ryuhei ^a   Hamaminato, Makoto ^a   Izawa, Tetsuo ^a   Kawashima, Shoichiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CHARGE TRANSFER; CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; THRESHOLD VOLTAGE;

CHARGE TRANSFER SENSE AMPLIFIERS; STATIC RANDOM ACCESS MEMORY (SRAM);

RANDOM ACCESS STORAGE;

EID: 0031621632     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)