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Volumn 34, Issue 11, 1999, Pages 1512-1525

High-voltage-tolerant I/O buffers with low-voltage CMOS process

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER CIRCUITS; CMOS INTEGRATED CIRCUITS; ELECTRIC NETWORK ANALYSIS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; INTERFACES (COMPUTER); LEAKAGE CURRENTS; MICROPROCESSOR CHIPS; MOSFET DEVICES; RANDOM ACCESS STORAGE; TRANSIENTS;

EID: 0033221989     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.799855     Document Type: Article
Times cited : (72)

References (7)
  • 6
    • 0005118009 scopus 로고    scopus 로고
    • A high speed 3.3 V IO buffer with 1.9 V tolerant CMOS process
    • G. Singh, "A high speed 3.3 V IO buffer with 1.9 V tolerant CMOS process," in Proc. Eur. Solid-State Circuits Conf., 1998, pp. 128-131.
    • (1998) Proc. Eur. Solid-state Circuits Conf. , pp. 128-131
    • Singh, G.1
  • 7
    • 0342422528 scopus 로고    scopus 로고
    • A 1.9 V I/O buffer with gate-oxide protection and dynamic bus termination for 400 MHz UltraSPArc microprocessor
    • G. P. Singh and R. B. Salem, "A 1.9 V I/O buffer with gate-oxide protection and dynamic bus termination for 400 MHz UltraSPArc microprocessor," in Proc. ISSCC, 1999, pp. 274-275.
    • (1999) Proc. ISSCC , pp. 274-275
    • Singh, G.P.1    Salem, R.B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.