Deep sub-V, single power-supply SRAM cell with multi-VT, boosted storage node and dynamic load

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 1996, Pages 132-133

  Itoh, K ^a   Fridi, A R ^a   Bellaouar, A ^a   Elmasry, M I ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BUFFER STORAGE; CAPACITANCE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POWER SUPPLIES TO APPARATUS; FIELD EFFECT TRANSISTORS;

BOOSTED GATE VOLTAGE; DIVIDED POWER LINE; DIVIDED WORD LINE; SOURCE GATE BACKBIASING SCHEMES; SUBTHRESHOLD CURRENT;

RANDOM ACCESS STORAGE;

EID: 0029702076     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)