Highly manufacturable 32 Mb ULP-SRAM technology by using dual gate process for 1.5 V Vcc operation

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 118-119

  Kim, D H ^a   Kim, S J ^a   Hwang, B J ^a   Seo, S H ^a   Choi, J H ^a   Lee, H S ^a   Yang, W S ^a   Kim, M S ^a   Kwak, K H ^a   Lee, J Y ^a   Joo, J Y ^a   Kim, J H ^a   Koh, K ^a   Park, S H ^a   Hong, J I ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MASKS; PHASE SHIFT; THRESHOLD VOLTAGE;

PHASE SHIFT MASKS (PSM);

STATIC RANDOM ACCESS STORAGE;

EID: 0036051766     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)