An embedded DRAM technology on SOI/bulk hybrid substrate formed with SEG process for high-end SOC application

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 112-113

  Yamada, Takachi ^a   Takahashi, K ^a   Oyamatsu, H ^a   Nagano, H ^a   Sato, T ^a   Mizushima, I ^a   Nitta, S ^a   Hojo, T ^a   Kokubun, K ^a   Yasumoto, K ^a   Matsubara, Y ^a   Yoshida, T ^a   Yamada, S ^a   Tsunashima, Y ^a   Saito, Y ^a   Nadahara, S ^a   Katsumata, Y ^a   Yoshimi, M ^a   Ishiuchi, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED SYSTEMS; EPITAXIAL GROWTH; ETCHING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES;

SELECTIVE EPITAXIAL GROWTH (SEG);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0036048291     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)