Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

Annalen der Physik

Volumn 524, Issue 3-4, 2012, Pages 123-132

  Chroneos, A ^a   Schwingenschlogl U ^b   Dimoulas, A ^a  

^a INSTITUTE OF MATERIALS SCIENCE   (Greece)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

defect engineering.; diffusion; dopant; Germanium; surface passivation

Indexed keywords

DEFECT ENGINEERING; DIFFUSION OF IMPURITIES; ELECTRICALLY ACTIVE DEFECTS; GE SURFACES; IMPURITY DIFFUSION; MICROELECTRONICS INDUSTRY; N-TYPE DOPANTS; SURFACE AND INTERFACES; SURFACE PASSIVATION;

DIFFUSION; DOPING (ADDITIVES); MICROELECTRONICS; PASSIVATION; POINT DEFECTS; SURFACE DEFECTS;

GERMANIUM;

EID: 84858978025     PISSN: 00033804     EISSN: 15213889     Source Type: Journal    
DOI: 10.1002/andp.201100246     Document Type: Review

References (129)

1. C. Claeys, and, E. Simoen, Germanium-Based Technologies: From Materials to Devices (Elsevier, Amsterdam, 2007).
2. G. Impellizzeri, et al., J. Appl. Phys. 109, 113527 (2011).
3. H. Tahini, A. Chroneos, R.W. Grimes, and, U. Schwingenschlögl, Appl. Phys. Lett. 99, 162103 (2011).
4. A. Chroneos, R.W. Grimes, and, C. Tsamis, Mater. Sci. Semicon. Proc. 9, 536 (2006).
5. C. Janke, et al., Phys. Rev. B 77, 195210 (2008).
6. A. Chroneos, H. Bracht, R.W. Grimes, and, B.P. Uberuaga, Mater. Sci. Eng. B 154-155, 72 (2008).
7. M. Naganawa, et al., Appl. Phys. Lett. 93, 191905 (2008).
8. S. Schneider, et al., J. Appl. Phys. 103, 033517 (2008).
9. E. Hüger, et al., Appl. Phys. Lett. 93, 162104 (2008).
10. A. Chroneos, et al., Phys. Rev. B 78, 195201 (2008).
11. P. Tsouroutas, D. Tsoukalas, and, H. Bracht, J. Appl. Phys. 108, 024903 (2010).
12. A. Chroneos, J. Appl. Phys. 105, 056101 (2009).
13. E. Bruno, et al., Phys. Rev. B 80, 033204 (2009).
14. A. Chroneos, et al., Appl. Phys. Lett. 94, 252104 (2009).
15. S. Decoster, et al., J. Appl. Phys. 105, 083522 (2009).
16. M. Werner, H. Mehrer, and, H.D. Hochheimer, Phys. Rev. B 32, 3930 (1985).
17. A.J.R. da Silva, et al., Rev. B 62, 9903 (2000).
18. R.A. Logan, Phys. Rev. 101, 1455 (1956).
19. A. Giese, N.A. Stolwijk, and, H. Bracht, Appl. Phys. Lett. 77, 642 (2000).
20. J. Vanhellemont, P. Spiewak, and, K. Sueoka, J. Appl. Phys. 101, 36103 (2007).
21. H. Bracht, and, A. Chroneos, J. Appl. Phys. 104, 076108 (2008).
22. N.A. Stolwijk, and, L. Lerner, J. Appl. Phys. 110, 033526 (2011).
23. J.A. Van Vechten, Phys. Rev. B 33, 2674 (1986).
24. S. Dannefaer, P. Mascher, and, D. Kerr, Phys. Rev. Lett. 56, 2195 (1986).
25. A.R. Peaker, et al., Mater. Sci. Eng. B 124-125, 166 (2005).
26. S.M. Hu, Phys. Status Solidi B 60, 595 (1973).
27. M.I. Guseva, and, A.N. Mansurova, Radiat. Eff. 20, 207 (1973).
28. S. Uppal, et al., J. Appl. Phys. 90, 4293 (2001).
29. C.O. Chui, et al., Appl. Phys. Lett. 83, 3275 (2003).
30. S. Uppal, et al., J. Appl. Phys. 96, 1376 (2004).
31. C. Janke, R. Jones, S. Ã-berg, and, P.R. Briddon, J. Mater. Sci., Mater. Electron. 18, 775 (2007).
32. A. Chroneos, B.P. Uberuaga, and, R.W. Grimes, J. Appl. Phys. 102, 083707 (2007).
33. R. Kube, et al., J. Appl. Phys. 106, 063534 (2009).
34. P. Dorner, et al., Z. Met.kd. 73, 325 (1982).
35. A. Chroneos, H. Bracht, R.W. Grimes, and, B.P. Uberuaga, Appl. Phys. Lett. 92, 172103 (2008).
36. A. Chroneos, et al., Chem. Phys. Lett. 490, 38 (2010).
37. G. Hellings, et al., Electrochem. Solid State Lett. 12, H417 (2009).
38. U. Södervall, et al., Philos. Mag. A 54, 539 (1986).
39. P. Dorner, et al., Acta Metall. 30, 941 (1982).
40. S. Brotzmann, et al., Phys. Rev. B 77, 235207 (2008).
41. A. Chroneos, R.W. Grimes, B.P. Uberuaga, and, H. Bracht, Phys. Rev. B 77, 235208 (2008).
42. H. Tahini, et al., Appl. Phys. Lett. 99, 072112 (2011).
43. S. Brotzmann, and, H. Bracht, J. Appl. Phys. 103, 033508 (2008).
44. A. Chroneos, et al., Appl. Phys. Lett. 91, 192106 (2007).
45. A. Chroneos, R.W. Grimes, H. Bracht, and, B.P. Uberuaga, J. Appl. Phys. 104, 113724 (2008).
46. A. Chroneos, R.W. Grimes, and, H. Bracht, J. Appl. Phys. 106, 063707 (2009).
47. H. Bracht, et al., Phys. Rev. Lett. 103, 255501 (2009).
48. S. Schneider, and, H. Bracht, Appl. Phys. Lett. 98, 014101 (2011).
49. C.O. Chui, et al., IEDM Tech. Dig., IEEE, New York, 2002, p. 437.
50. H. Shang, et al., IEDM Tech. Dig., IEEE, New York, 2002, p. 441.
51. A. Ritenour, et al., IEDM Tech. Dig., IEEE, New York, 2003, p. 433.
52. H. Shang, et al., IEEE EDL 25, 135 (2004).
53. H. Kim, C. Chui, K.C. Saraswat, and, P.C. McIntyre, Appl. Phys. Lett. 83, 2647 (2003).
54. H. Kim, et al., Appl. Phys. Lett. 85, 2902 (2004).
55. J.J.-H. Chen, et al., IEEE TED 51, 1441 (2004).
56. K. Kita, K. Kyuno, and, A. Toriumi, Appl. Phys. Lett. 85, 52 (2004).
57. S. Van Elshocht, et al., Appl. Phys. Lett. 85, 3824 (2004).
58. S. Van Elshocht, et al., Appl. Phys. Lett. 88, 141904 (2006).
59. A. Dimoulas, et al., Appl. Phys. Lett. 86, 032908 (2005).
60. Y. Kamata, Y. Kamimuta, T. Ino, and, A. Nishiyama, Jpn. J. Appl. Phys. 44, 2323 (2005).
61. A. Ritenour, et al., Appl. Phys. Lett. 88, 132107 (2006).
62. A. Dimoulas, et al., Thin Solid Films 515, 6337 (2007).
63. T. Maeda, et al., Appl. Phys. Lett. 85, 3181 (2004).
64. T. Maeda, M. Nishizawa, Y. Morita, and, S. Takagi, Appl. Phys. Lett. 90, 072911 (2007).
65. K.H. Kim, R.G. Gordon, A. Ritenour, and, D.A. Antoniadis, Appl. Phys. Lett. 90, 212104 (2007).
66. N. Wu, Appl. Phys. Lett. 85, 4127 (2004).
67. C.C. Cheng, et al., Appl. Phys. Lett. 90, 012905 (2007).
68. N. Taoka, et al., Appl. Phys. Lett. 92, 113511 (2008).
69. P. Tsipas, et al., Appl. Phys. Lett. 93, 082904 (2008).
70. D. Tsoutsou, et al., J. Appl. Phys. 106, 024107 (2009).
71. F. Boscherini, et al., Appl. Phys. Lett. 99, 121909 (2011).
72. J. Mitard, et al., IEDM Tech. Dig., IEEE, New York, 2008, p. 873.
73. M.M. Frank, et al., Appl. Phys. Lett. 89, 112905 (2006).
74. M. Houssa, et al., D. Nelis, D. Hellin, G. Pourtois, and, T. Conard, Appl. Phys. Lett. 90, 222105 (2007).
75. C. Merckling, et al., Microelectron. Eng. 88, 399 (2011).
76. D. Lin, et al., IEDM Tech. Dig., IEEE, New York, 2009, p. 327.
77. A. Molle, Md.N.K. Bhuiyan, G. Talarida, and, M. Fanciulli, Appl. Phys. Lett. 89, 083504 (2006).
78. A. Delabie, et al., Appl. Phys. Lett. 91, 082904 (2007).
79. D. Kuzum, et al., IEDM Tech. Dig., IEEE, New York, 2008, p. 723.
80. K. Kita, et al., ECS Trans. 11(4), 461 (2007).
81. H. Matsubara, T. Sasada, M. Takenaka, and, S. Takagi, Appl. Phys. Lett. 93, 032104 (2008).
82. D. Schmeisser, et al., Surf. Sci. 172, 455 (1986).
83. K. Prabhakaran, F. Maeda, Y. Watanabe, and, T. Ogino, Appl. Phys. Lett. 76, 2244 (2000).
84. K. Kita, et al., IEDM Tech. Dig., IEEE, New York, 2009, p. 693.
85. S.K. Wang, J. Appl. Phys. 108, 054104 (2010).
86. S.K. Wang, Jpn. J. Appl. Phys. 50, 04DA01 (2011).
87. L. Tsetseris, and, S.T. Pantelides, Appl. Phys. Lett. 95, 262107 (2009).
88. J.F. Binder, P. Broqvist, and, A. Pasquarello, Appl. Phys. Lett. 97, 032107 (2010).
89. H. Hosono, et al., Phys. Rev B 46, 11445 (1992).
90. C.H. Lee, et al., IEDM Tech. Dig., IEEE, New York, 2009, p. 457.
91. C.H. Lee, et al., IEDM Tech. Dig., IEEE, New York, 2010, p. 416.
92. D. Kuzum, et al., IEDM Tech. Dig., IEEE, New York, 2009, p. 453.
93. G. Mavrou, et al., J. Appl. Phys. 103, 014506 (2008).
94. J. Song, et al., Microelectron. Eng. 86, 1638 (2009).
95. G. Mavrou, et al., Appl. Phys. Lett. 93, 212904 (2008).
96. C. Rossel, et al., (Proc. ESSDERC 2008, IEEE, New York) p. 79.
97. S. Abermann, et al., Appl. Surf. Sci. 256, 5031 (2010).
98. C. Henkel, et al., IEEE TED 57, 3295 (2010).
99. D.P. Brunco, et al., J. Appl. Phys. 102, 024104 (2007).
100. G. Nicholas, et al., IEEE TED 54, 1425 (2007).
101. E.K. Evangelou, M.S. Rahman, and, A. Dimoulas, IEEE TED 56, 399 (2009).
102. E.K. Evangelou, et al., Thin Solid Films 518, 3964 (2010).
103. A. Molle, et al., J. Appl. Phys. 102, 034513 (2007).
104. E.K. Evangelou, G. Mavrou, A. Dimoulas, and, N. Konofaos, Solid State Electron. 51, 164 (2007).
105. J.J. Gu, et al., Appl. Phys. Lett. 97 012106 (2010).
106. C. Radtke, et al., Electrochem. Solid State. Lett. 13, G37 (2010).
107. A. Dimoulas, et al., Appl. Phys. Lett. 96, 012902 (2010).
108. D. Tsoutsou, et al., J. Appl. Phys. 108, 064115 (2010).
109. K. Kita, T. Takahashi, H. Nomura, and, S. Suzuki, Appl. Surf. Sci. 254, 6100 (2008).
110. M. Perego, G. Scarel, and, M. Fanciulli, Appl. Phys. Lett. 90, 162115 (2007).
111. R. Zhang, et al., (VLSI Technology Tech. Dig., IEEE, New York, 2011) p. 56.
112. R. Zhang, Microelectron. Eng. 88, 1533 (2011).
113. Y. Kamata, A. Takashima, Y. Kamimuta, and, T. Tezuka, (VLSI Technology Tech. Dig., IEEE, New York, 2009) p. 78.
114. X. Sun, et al., Appl. Phys. Lett. 98, 212903 (2011).
115. V.V. Afanas'ev, Y.G. Fedorenko, and, A. Stesmans, Appl. Phys. Lett. 87, 032107 (2005).
116. V.V. Afanas'ev, et al., Appl. Phys. Lett. 95, 222106 (2009).
117. M. Houssa, et al., Appl. Phys. Lett. 93, 161909 (2008).
118. S. Baldovino, A. Molle, and, M. Fanciulli, Appl. Phys. Lett. 93, 242105 (2008).
119. J.R. Weber, A. Janotti, P. Rinke, and, C.G. Van de Walle, Appl. Phys. Lett. 91, 142101 (2007).
120. P. Broqvist, A. Alkauskas, and, A. Pasquarello, Phys. Rev. B 78, 075203 (2008).
121. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and, E.K. Evangelou, Appl. Phys. Lett. 89, 252110 (2006).
122. T. Nishimura, K. Kita, and, A. Toriumi, Appl. Phys. Lett. 91, 123123 (2007).
123. T.J. Grassman, S.R. Bishop, and, A.C. Kummel, Surf. Sci. 602, 2373 (2008).
124. D. Kuzum, K. Martens, T. Krishnamohan, and, K.C. Saraswat, Appl. Phys. Lett. 95, 252101 (2009).
125. D. Kuzum, et al., IEEE TED 58, 1015 (2011).
126. P. Tsipas, and, A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009).
127. W. Van Den Daele, et al., Solid State Electron. 54, 205 (2010).
128. S. Zhang, et al., Nano Lett. 9, 3268 (2009).
129. Z.C. Holman, C.-Y. Liu, and, U.R. Kortshagen, Nano Lett. 10, 2661 (2010).