An atomic view of Fermi level pinning of Ge(100) by O2

Surface Science

Volumn 602, Issue 14, 2008, Pages 2373-2381

  Grassman, Tyler J ^a   Bishop, Sarah R ^a   Kummel, Andrew C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Density functional calculations; Fermi level pinning; Germanium; Oxidation; Scanning tunneling microscopy; Scanning tunneling spectroscopy; Semiconducting surfaces; Suboxides

Indexed keywords

ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; ELECTRIC CURRENTS; ELECTRONIC PROPERTIES; GERMANIUM; MICROSCOPIC EXAMINATION; SCANNING TUNNELING MICROSCOPY;

ATOMIC LEVELS; FERMI LEVEL PINNING; GE(0 0 1); ROOM-TEMPERATURE (RT); SCANNING TUNNELING MICROSCOPY (STM);

IMAGING TECHNIQUES;

EID: 48349114969     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.05.019     Document Type: Article

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