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Applied Physics Letters

Volumn 95, Issue 26, 2009, Pages

Morphology and defect properties of the Ge-GeO2 interface

(2) Tsetseris, L a,b,c Pantelides, S T c,d

a NATIONAL TECHNICAL UNIVERSITY OF ATHENS (Greece)

b ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

c VANDERBILT UNIVERSITY (United States)

d OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE ROUGHNESS; DEFECT PROPERTY; EXPERIMENTAL DATA; FIRST-PRINCIPLES CALCULATION; INTERFACE MORPHOLOGIES; SI TECHNOLOGY;

FLUORINE; GERMANIUM OXIDES; MORPHOLOGY; SILICON; SILICON COMPOUNDS;

GERMANIUM;

EID: 73649089315 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3280385 Document Type: Article

Times cited : (40)

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