Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility

Applied Physics Letters

Volumn 92, Issue 11, 2008, Pages

  Taoka, Noriyuki ^a   Harada, Masatomi ^a   Yamashita, Yoshimi ^a   Yamamoto, Toyoji ^a   Sugiyama, Naoharu ^a   Takagi, Shin Ichi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GERMANIUM; PASSIVATION; SILICON;

INVERSION-LAYER HOLE MOBILITY; METAL-INSULATOR-SEMICONDUCTOR INTERFACE PROPERTIES;

MOS DEVICES;

EID: 41049091949     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2899631     Document Type: Article

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