Ion implantation and electron irradiation damage in unstrained germanium and silicon-germanium alloys

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 166-169

  Peaker, A R ^a   Markevich, V P ^a   Murin, L I ^b   Abrosimov, N V ^c   Litvinov, V V ^d  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b Institute Semiconductor Physics   (Belarus)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^d BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

DLTS; Germanium; Ion implantation; Radiation damage; Silicon

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; GAMMA RAYS; GERMANIUM; HOLE MOBILITY; ION IMPLANTATION; LAPLACE TRANSFORMS; RADIATION DAMAGE; SEMICONDUCTOR DEVICES; SILICON;

DEFECT REACTIONS; FURNACE ANNEALING; IMPLANTATION DAMAGE; VACANCY CLUSTERS;

SILICON ALLOYS;

EID: 27844580147     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.102     Document Type: Conference Paper

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