Correlation of charge buildup and stress-induced leakage current in cerium oxide films grown on Ge (100) substrates

IEEE Transactions on Electron Devices

Volumn 56, Issue 3, 2009, Pages 399-407

  Evangelou, Evangelos K ^a   Rahman, M Shahinur ^a   Dimoulas, A ^b  

^a UNIVERSITY OF IOANNINA   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

Cerium oxide (CeO2); Charge trapping; Germanium (Ge); Rare earth oxide (REO); Stress induced leakage current (SILC)

Indexed keywords

CERIUM; CERIUM COMPOUNDS; CHARGE TRAPPING; CHEMICAL MODIFICATION; ELECTROLYTIC CAPACITORS; ELECTROMAGNETIC INDUCTION; GERMANIUM; LEAKAGE CURRENTS; MOLECULAR DYNAMICS; MOS CAPACITORS; MOSFET DEVICES; OXIDES; PLATINUM; RARE EARTHS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SUBSTRATES;

APPLIED FIELDS; BULK OXIDE TRAPS; CERIUM OXIDE (CEO2); CHARGE BUILDUPS; CONSTANT VOLTAGE STRESS; DIELECTRIC LAYERS; GATE ELECTRODES; GE(100); MOLECULAR BEAM DEPOSITIONS; MOS TECHNOLOGIES; N-TYPE GE; NEUTRAL DEFECTS; RARE EARTH OXIDE (REO); RELAXATION EFFECTS; RELIABILITY CHARACTERISTICS; SEMICONDUCTOR SUBSTRATES; STRESS-INDUCED LEAKAGE CURRENT (SILC);

OXIDE FILMS;

EID: 62849092313     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2011935     Document Type: Article

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