Electronic properties of Ge dangling bond centers at Si1-x Gex / SiO2 interfaces

Applied Physics Letters

Volumn 95, Issue 22, 2009, Pages

  Afanas'ev, V V ^a   Houssa, M ^a   Stesmans, A ^a   Souriau, L ^b   Loo, R ^b   Meuris, M ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR TRAPS; DEPASSIVATION; ENERGY LEVEL; GE FRACTION; QUANTITATIVE AGREEMENT;

DANGLING BONDS; DEFECTS; ELECTRONIC PROPERTIES; PASSIVATION; RESONANCE; SILICON; SILICON COMPOUNDS;

GERMANIUM;

EID: 71949123257     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3266853     Document Type: Article

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