Ultrathin Si capping layer suppresses charge trapping in HfO xNy/Ge metal-insulator-semiconductor capacitors

Applied Physics Letters

Volumn 90, Issue 1, 2007, Pages

  Cheng, Chao Ching ^a   Chien, Chao Hsin ^a,b   Luo, Guang Li ^b   Yang, Chun Hui ^b   Kuo, Mei Ling ^b   Lin, Je Hung ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIFFUSION; ELECTRIC INSULATORS; PASSIVATION; THERMODYNAMIC STABILITY;

CAPACITOR STRUCTURE; CHARGE TRAPPING;

ULTRATHIN FILMS;

EID: 33846050504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2430629     Document Type: Article

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