SCOPUS 정보 검색 플랫폼

Volumn 108, Issue 6, 2010, Pages

Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of la in the interface chemistry

(7) Tsoutsou, D a Panayiotatos, Y a Sotiropoulos, A a Mavrou, G a Golias, E a Galata, S F a Dimoulas, A a

a INSTITUTE OF MATERIALS SCIENCE (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPATIBILITY; GATE STACKS; GE SUBSTRATES; GE SURFACES; HIGH-K GATE STACKS; INTERFACE CHEMISTRY; LANTHANUM GERMANATE; METAL LAYER; METAL OXIDES; OVERLAYERS; OXYGEN DENSITY; PASSIVATING LAYER;

ALUMINUM; EMISSION SPECTROSCOPY; GERMANIUM; HAFNIUM; HAFNIUM COMPOUNDS; LANTHANUM ALLOYS; LOGIC GATES; METALLIC COMPOUNDS; OXYGEN; PASSIVATION; PHOTOELECTRICITY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL STABILITY;

EID: 77957744407 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3478751 Document Type: Article

Times cited : (22)

References (28)

1
- 69249119394
- MRSBEA 0883-7694
- M. Heyns and W. Tsai, MRS Bull. MRSBEA 0883-7694 34, 485 (2009).
- (2009) MRS Bull. , vol.34 , pp. 485
- Heyns, M.¹ Tsai, W.²

2
- 77951184452
- TDIMD5 0163-1918
- D. Kuzum, T. Krishnamohan, A. Nainani, Y. Sun, P. A. Pianetta, H. S.-P. Wong, and K. C. Saraswat, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2009, 453.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2009 , pp. 453
- Kuzum, D.¹ Krishnamohan, T.² Nainani, A.³ Sun, Y.⁴ Pianetta, P.A.⁵ Wong, H.S.-P.⁶ Saraswat, K.C.⁷

3
- 77951149425
- TDIMD5 0163-1918
- C. H. Lee, T. Nishimura, N. Saido, K. Nagashio, K. Kita, and A. Toriumi, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2009, 457.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2009 , pp. 457
- Lee, C.H.¹ Nishimura, T.² Saido, N.³ Nagashio, K.⁴ Kita, K.⁵ Toriumi, A.⁶

4
- 77951182593
- TDIMD5 0163-1918
- K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, and S. Takagi, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2009, 681.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2009 , pp. 681
- Morii, K.¹ Iwasaki, T.² Nakane, R.³ Takenaka, M.⁴ Takagi, S.⁵

5
- 78650554079
- TDIMD5 0163-1918
- K. Kita, S. K. Wang, M. Yoshida, C. H. Lee, K. Nagashio, T. Nishimura, and A. Toriumi, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2009, 693.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2009 , pp. 693
- Kita, K.¹ Wang, S.K.² Yoshida, M.³ Lee, C.H.⁴ Nagashio, K.⁵ Nishimura, T.⁶ Toriumi, A.⁷

6
- 68249110411
- APECE4 1882-0778. 10.1143/APEX.2.071404
- C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi, Appl. Phys. Express APECE4 1882-0778 2, 071404 (2009). 10.1143/APEX.2.071404
- (2009) Appl. Phys. Express , vol.2 , pp. 071404
- Lee, C.H.¹ Tabata, T.² Nishimura, T.³ Nagashio, K.⁴ Kita, K.⁵ Toriumi, A.⁶

7
- 41749107944
- Ge-interface engineering with ozone oxidation for low interface-state density
- DOI 10.1109/LED.2008.918272
- D. Kuzum, T. Krishnamohan, A. J. Pethe, A. K. Okyay, Y. Oshima, Y. Sun, J. P. McVittie, P. A. Pianetta, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 328 (2008). 10.1109/LED.2008.918272 (Pubitemid 351486773)
- (2008) IEEE Electron Device Letters , vol.29 , Issue.4 , pp. 328-330
- Kuzum, D.¹ Krishnamohan, T.² Pethe, A.J.³ Okyay, A.K.⁴ Oshima, Y.⁵ Sun, Y.⁶ McVittie, J.P.⁷ Pianetta, P.A.⁸ McIntyre, P.C.⁹ Saraswat, K.C.¹⁰

8
- 73649147380
- THSFAP 0040-6090. 10.1016/j.tsf.2009.10.065
- A. Molle, A. Baldovino, S. Spiga, and M. Fanciulli, Thin Solid Films THSFAP 0040-6090 518, S96 (2010). 10.1016/j.tsf.2009.10.065
- (2010) Thin Solid Films , vol.518 , pp. 96
- Molle, A.¹ Baldovino, A.² Spiga, S.³ Fanciulli, M.⁴

9
- 67349166635
- MIENEF 0167-9317. 10.1016/j.mee.2009.03.048
- C. Merckling, J. Penaud, D. Kohen, F. Bellenger, A. Alian, G. Brammertz, M. El-Kazzi, M. Houssa, J. Dekoster, M. Caymax, M. Meuris, and M. M. Heyns, Microelectron. Eng. MIENEF 0167-9317 86, 1592 (2009). 10.1016/j.mee.2009.03.048
- (2009) Microelectron. Eng. , vol.86 , pp. 1592
- Merckling, C.¹ Penaud, J.² Kohen, D.³ Bellenger, F.⁴ Alian, A.⁵ Brammertz, G.⁶ El-Kazzi, M.⁷ Houssa, M.⁸ Dekoster, J.⁹ Caymax, M.¹⁰ Meuris, M.¹¹ Heyns, M.M.¹²

10
- 77951878588
- EDLEDZ 0741-3106. 10.1109/LED.2010.2044011
- F. Bellenger, B. De Jaeger, C. Merckling, M. Houssa, J. Penaud, L. Nyns, E. Vrancken, M. Caymax, M. Meuris, T. Hoffmann, K. De Meyer, and M. Heyns, IEEE Electron Device Lett. EDLEDZ 0741-3106 31, 402 (2010). 10.1109/LED.2010.2044011
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 402
- Bellenger, F.¹ De Jaeger, B.² Merckling, C.³ Houssa, M.⁴ Penaud, J.⁵ Nyns, L.⁶ Vrancken, E.⁷ Caymax, M.⁸ Meuris, M.⁹ Hoffmann, T.¹⁰ De Meyer, K.¹¹ Heyns, M.¹²

11
- 34247360026
- 2 layers using a divalent Ge precursor
- DOI 10.1063/1.2723684
- M. Perego, G. Scarel, M. Fanciulli, I. L. Fedushkin, and A. A. Skatova, Appl. Phys. Lett. APPLAB 0003-6951 90, 162115 (2007). 10.1063/1.2723684 (Pubitemid 46644831)
- (2007) Applied Physics Letters , vol.90 , Issue.16 , pp. 162115
- Perego, M.¹ Scarel, G.² Fanciulli, M.³ Fedushkin, I.L.⁴ Skatova, A.A.⁵

12
- 0003998388
- 87th ed. (Taylor and Francies Group, Boca Raton, London, New York)
- D. R. Lide, CRC Handbook of Chemsitry and Physics, 87th ed. (Taylor and Francies Group, Boca Raton, London, New York, 2006).
- (2006) CRC Handbook of Chemsitry and Physics
- Lide, D.R.¹

13
- 75749085337
- APPLAB 0003-6951. 10.1063/1.3284655
- A. Dimoulas, D. Tsoutsou, Y. Panayiotatos, A. Sotiropoulos, G. Mavrou, S. F. Galata, and E. Golias, Appl. Phys. Lett. APPLAB 0003-6951 96, 012902 (2010). 10.1063/1.3284655
- (2010) Appl. Phys. Lett. , vol.96 , pp. 012902
- Dimoulas, A.¹ Tsoutsou, D.² Panayiotatos, Y.³ Sotiropoulos, A.⁴ Mavrou, G.⁵ Galata, S.F.⁶ Golias, E.⁷

14
- 38349161968
- JAPIAU 0021-8979. 10.1063/1.2827499
- G. Mavrou, S. Galata, P. Tsipas, A. Sotiropoulos, Y. Panayiotatos, A. Dimoulas, E. K. Evangelou, J. W. Seo, and Ch. Dieker, J. Appl. Phys. JAPIAU 0021-8979 103, 014506 (2008). 10.1063/1.2827499
- (2008) J. Appl. Phys. , vol.103 , pp. 014506
- Mavrou, G.¹ Galata, S.² Tsipas, P.³ Sotiropoulos, A.⁴ Panayiotatos, Y.⁵ Dimoulas, A.⁶ Evangelou, E.K.⁷ Seo, J.W.⁸ Dieker, Ch.⁹

15
- 57049158157
- APPLAB 0003-6951. 10.1063/1.3033546
- G. Mavrou, P. Tsipas, A. Sotiropoulos, S. Galata, Y. Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine, Appl. Phys. Lett. APPLAB 0003-6951 93, 212904 (2008). 10.1063/1.3033546
- (2008) Appl. Phys. Lett. , vol.93 , pp. 212904
- Mavrou, G.¹ Tsipas, P.² Sotiropoulos, A.³ Galata, S.⁴ Panayiotatos, Y.⁵ Dimoulas, A.⁶ Marchiori, C.⁷ Fompeyrine, J.⁸

16
- 51749113091
- APPLAB 0003-6951. 10.1063/1.2972123
- V. V. Afanas'ev, A. Stesmans, G. Mavrou, and A. Dimoulas, Appl. Phys. Lett. APPLAB 0003-6951 93, 102115 (2008). 10.1063/1.2972123
- (2008) Appl. Phys. Lett. , vol.93 , pp. 102115
- Afanas'Ev, V.V.¹ Stesmans, A.² Mavrou, G.³ Dimoulas, A.⁴

17
- 67349154785
- MIENEF 0167-9317. 10.1016/j.mee.2009.03.096
- C. Andersson, C. Rossel, M. Sousa, D. J. Webb, C. Marchiori, D. Caimi, H. Siegwart, Y. Panayiotatos, A. Dimoulas, and J. Fompeyrine, Microelectron. Eng. MIENEF 0167-9317 86, 1635 (2009). 10.1016/j.mee.2009.03.096
- (2009) Microelectron. Eng. , vol.86 , pp. 1635
- Andersson, C.¹ Rossel, C.² Sousa, M.³ Webb, D.J.⁴ Marchiori, C.⁵ Caimi, D.⁶ Siegwart, H.⁷ Panayiotatos, Y.⁸ Dimoulas, A.⁹ Fompeyrine, J.¹⁰

18
- 67649948779
- APPLAB 0003-6951. 10.1063/1.3173199
- S. Abermann, O. Bethge, C. Henkel, and E. Bertagnolli, Appl. Phys. Lett. APPLAB 0003-6951 94, 262904 (2009). 10.1063/1.3173199
- (2009) Appl. Phys. Lett. , vol.94 , pp. 262904
- Abermann, S.¹ Bethge, O.² Henkel, C.³ Bertagnolli, E.⁴

19
- 77950916988
- ASUSEE 0169-4332. 10.1016/j.apsusc.2010.03.049
- S. Abermann, C. Henkel, O. Bethge, G. Pozzovino, P. Klang, and E. Bertagnolli, Appl. Surf. Sci. ASUSEE 0169-4332 256, 5031 (2010). 10.1016/j.apsusc.2010.03.049
- (2010) Appl. Surf. Sci. , vol.256 , pp. 5031
- Abermann, S.¹ Henkel, C.² Bethge, O.³ Pozzovino, G.⁴ Klang, P.⁵ Bertagnolli, E.⁶

20
- 17044437005
- HfO2 high- κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
- DOI 10.1063/1.1854195, 032908
- A. Dimoulas, G. Mavrou, G. Vellianitis, E. Evangelou, N. Boukos, M. Houssa, and M. Caymax, Appl. Phys. Lett. APPLAB 0003-6951 86, 032908 (2005). 10.1063/1.1854195 (Pubitemid 40493493)
- (2005) Applied Physics Letters , vol.86 , Issue.3 , pp. 1-3
- Dimoulas, A.¹ Mavrou, G.² Vellianitis, G.³ Evangelou, E.⁴ Boukos, N.⁵ Houssa, M.⁶ Caymax, M.⁷

21
- 33747862495
- In situ chemical and structural investigations of the oxidation of Ge(001) substrates by atomic oxygen
- DOI 10.1063/1.2337543
- A. Molle, M. N. K. Bhuiyan, G. Tallarida, and M. Fanciulli, Appl. Phys. Lett. APPLAB 0003-6951 89, 083504 (2006). 10.1063/1.2337543 (Pubitemid 44286188)
- (2006) Applied Physics Letters , vol.89 , Issue.8 , pp. 083504
- Molle, A.¹ Bhuiyan, M.N.K.² Tallarida, G.³ Fanciulli, M.⁴

22
- 0035848123
- APPLAB 0003-6951. 10.1063/1.1355002
- M. Copel, E. Cartier, and F. M. Ross, Appl. Phys. Lett. APPLAB 0003-6951 78, 1607 (2001). 10.1063/1.1355002
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1607
- Copel, M.¹ Cartier, E.² Ross, F.M.³

23
- 79956052295
- APPLAB 0003-6951. 10.1063/1.1505120
- R. L. Opila, G. D. Wilk, M. A. Alam, R. B. van Dover, and B. W. Busch, Appl. Phys. Lett. APPLAB 0003-6951 81, 1788 (2002). 10.1063/1.1505120
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1788
- Opila, R.L.¹ Wilk, G.D.² Alam, M.A.³ Van Dover, R.B.⁴ Busch, B.W.⁵

24
- 64149125385
- APPLAB 0003-6951. 10.1063/1.3110968
- K. Kita and A. Toriumi, Appl. Phys. Lett. APPLAB 0003-6951 94, 132902 (2009). 10.1063/1.3110968
- (2009) Appl. Phys. Lett. , vol.94 , pp. 132902
- Kita, K.¹ Toriumi, A.²

25
- 0036502104
- MRSBEA 0883-7694
- D. G. Schlom and J. H. Haeni, MRS Bull. MRSBEA 0883-7694 27, 198 (2002).
- (2002) MRS Bull. , vol.27 , pp. 198
- Schlom, D.G.¹ Haeni, J.H.²

26
- 77957746848
- 3)
- 3).

27
- 67349262030
- MIENEF 0167-9317. 10.1016/j.mee.2009.03.087
- P. Broqvist, J. F. Binder, and A. Pasquarello, Microelectron. Eng. MIENEF 0167-9317 86, 1589 (2009). 10.1016/j.mee.2009.03.087
- (2009) Microelectron. Eng. , vol.86 , pp. 1589
- Broqvist, P.¹ Binder, J.F.² Pasquarello, A.³

28
- 0000107476
- ACSEBH 1600-5368. 10.1107/S0365110X56002965
- S. Geller and V. B. Balla, Acta Crystallogr. ACSEBH 1600-5368 9, 1019 (1956). 10.1107/S0365110X56002965
- (1956) Acta Crystallogr. , vol.9 , pp. 1019
- Geller, S.¹ Balla, V.B.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.