Fabrication of GeO2 layers using a divalent Ge precursor

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Perego, M ^a   Scarel, G ^a   Fanciulli, M ^a   Fedushkin, I L ^b   Skatova, A A ^b  

^a LABORATORIO MDM   (Italy)

^b G A RAZUVAEV INSTITUTE OF ORGANOMETALLIC CHEMISTRY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CONDUCTION BANDS; CONTAMINATION; DIELECTRIC PROPERTIES; HETEROJUNCTIONS; STOICHIOMETRY; VALENCE BANDS;

CONTAMINATION LEVEL IS; DIELECTRIC CONSTANT OXIDES; OFFSETS;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 34247360026     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2723684     Document Type: Article

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