Direct comparison of ZrO2 and HfO2 on Ge substrate in terms of the realization of ultrathin high-κ gate stacks

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2323-2329

  Kamata, Yoshiki ^a   Kamimuta, Yuuichi ^a   Ino, Tsunehiro ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Desorption; Germanium; Hafnium oxide; Interdiffusion; Interfacial layer; Zirconium oxide

Indexed keywords

ANNEALING; CAPACITANCE; DEPOSITION; DESORPTION; HAFNIUM COMPOUNDS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; SEMICONDUCTING GERMANIUM; ZIRCONIA;

CAPACITANCE EQUIVALENT THICKNESS (CET); HAFNIUM OXIDE; INTERFACIAL LAYERS; POST DEPOSITION ANNEALING (PDA);

GATES (TRANSISTOR);

EID: 21244468273     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2323     Document Type: Conference Paper

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