Stabilization of a very high-k crystalline ZrO 2 phase by post deposition annealing of atomic layer deposited ZrO 2 /La 2 O 3 dielectrics on germanium

Applied Surface Science

Volumn 256, Issue 16, 2010, Pages 5031-5034

  Abermann, S ^a   Henkel, C ^a   Bethge, O ^a   Pozzovivo, G ^a   Klang, P ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

ALD; Germanium; High k; MOS

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; GERMANIUM; MOLYBDENUM; STABILIZATION; ZIRCONIA;

ATOMIC LAYER DEPOSITED; DIELECTRIC STACK; FILM-THICKNESS RATIOS; HIGH- K; INTERFACE TRAP DENSITY; POST DEPOSITION ANNEALING; RELATIVE DIELECTRIC CONSTANT; TEMPERATURE RANGE;

HIGH-K DIELECTRIC;

EID: 77950916988     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.049     Document Type: Article

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