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Volumn 13, Issue 5, 2010, Pages

Physicochemical and electrical properties of LaLuO3/Ge(100) structures submitted to postdeposition annealings

(9) Radtke, C a Krug, C a Soares, G V b Baumvol, I J R a,b Lopes, J M J c Durgun Ozben, E c Nichau, A c Schubert, J c Mantl, S c

a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL (Brazil)

b UNIVERSITY OF CAXIAS DO SUL (Brazil)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PARAMETERS; BENEFICIAL EFFECTS; DIELECTRIC LAYER; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; GE(100); INTERFACE CHARACTERISTIC; OXYGEN ANNEALING; PHYSICOCHEMICAL PROPERTY; POST-DEPOSITION; POST-OXIDATION; SUBSTRATE OXIDATION;

GERMANIUM; OXYGEN;

ELECTRIC PROPERTIES;

EID: 77949678824 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3322517 Document Type: Article

Times cited : (13)

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