-
1
-
-
0003822943
-
-
G. Timp, Springer Verlag, ed.
-
D. M. Tennant, in Nanotechnology, ed., G. Timp,, Springer Verlag, 1998
-
(1998)
Nanotechnology
-
-
Tennant, D.M.1
-
3
-
-
79960163226
-
-
Data taken from the International Technology Roadmap for Semiconductors (ITRS) 2003 and 2009 editions
-
Data taken from the International Technology Roadmap for Semiconductors (ITRS) 2003 and 2009 editions, https://www.itrs.net
-
-
-
-
6
-
-
59949103571
-
-
M. L. Ling C. J. Tay C. Quan G. S. Chua Q. Lin J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom. 2009 27 85
-
(2009)
J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom.
, vol.27
, pp. 85
-
-
Ling, M.L.1
Tay, C.J.2
Quan, C.3
Chua, G.S.4
Lin, Q.5
-
8
-
-
51549115631
-
-
M. Hori T. Nagai A. Nakamura T. Abe G. Wakamatsu T. Kakizawa Y. Anno M. Sugiura S. Kusumoto Y. Yamaguchi T. Shimokawa Proc. SPIE 2008 6923 69230H
-
(2008)
Proc. SPIE
, vol.6923
-
-
Hori, M.1
Nagai, T.2
Nakamura, A.3
Abe, T.4
Wakamatsu, G.5
Kakizawa, T.6
Anno, Y.7
Sugiura, M.8
Kusumoto, S.9
Yamaguchi, Y.10
Shimokawa, T.11
-
9
-
-
65849183407
-
-
C. Fonseca M. Somervell S. Scheer W. Printza K. Nafusb S. Hatakeyamab Y. Kuwahara T. Niwa S. Bernard R. Gronheid Proc. SPIE 2009 7274 72740I-1
-
(2009)
Proc. SPIE
, vol.7274
-
-
Fonseca, C.1
Somervell, M.2
Scheer, S.3
Printza, W.4
Nafusb, K.5
Hatakeyamab, S.6
Kuwahara, Y.7
Niwa, T.8
Bernard, S.9
Gronheid, R.10
-
15
-
-
79960170843
-
-
ITRS 2009, Tables-LITH3
-
ITRS 2009, Tables-LITH3
-
-
-
-
20
-
-
79960154949
-
-
http://www.asml.com/asml/
-
-
-
-
21
-
-
79960192961
-
Immersion scanner nikon NSR-S620 for double patterning
-
Y. Shibazaki, M. Hamatani, K. Hirano, J. Ishikawa, Y. Iriuchijima, and S. Owa, "Immersion Scanner Nikon NSR-S620 for Double Patterning", 6th International Symposium on Immersion Lithography Extensions, 2009
-
(2009)
6th International Symposium on Immersion Lithography Extensions
-
-
Shibazaki, Y.1
Hamatani, M.2
Hirano, K.3
Ishikawa, J.4
Iriuchijima, Y.5
Owa, S.6
-
22
-
-
79960162692
-
-
See for example: http://www.manroland.com/com/en/7497.htm
-
-
-
-
23
-
-
79960161406
-
-
See for example: http://www.manroland.com/com/en/lithoman.htm
-
-
-
-
28
-
-
77957765642
-
-
J. Perelaer P. J. Smith D. Mager D. Soltman S. K. Volkman V. Subramanian J. G. Korvink U. S. Schubert J. Mater. Chem. 2010 20 8446
-
(2010)
J. Mater. Chem.
, vol.20
, pp. 8446
-
-
Perelaer, J.1
Smith, P.J.2
Mager, D.3
Soltman, D.4
Volkman, S.K.5
Subramanian, V.6
Korvink, J.G.7
Schubert, U.S.8
-
32
-
-
40149095239
-
-
Source brightness is limited both by the limitation in the generation of photons and by thermal and damage issues in the optics that transfer the photons to the mask
-
S.-Y. Moon J.-M. Kim J. Photochem. Photobiol., C 2007 8 157
-
(2007)
J. Photochem. Photobiol., C
, vol.8
, pp. 157
-
-
Moon, S.-Y.1
Kim, J.-M.2
-
33
-
-
79960199505
-
-
G. Wallraff, W. Hinsberg, F. A. Houle, J. Opitz, D. Hopper and J. Hutchinson, SPIE Advanced Resist Technology and Processing XII, 1995, vol. 438, pp. 486-495
-
(1995)
SPIE Advanced Resist Technology and Processing XII
, vol.438
, pp. 486-495
-
-
Wallraff, G.1
Hinsberg, W.2
Houle, F.A.3
Opitz, J.4
Hopper, D.5
Hutchinson, J.6
-
38
-
-
79959339126
-
-
G. M. Gallatin P. Naulleau D. Niakoula R. Brainard E. Hassanein R. Matyi J. Thackeray K. Spear K. Dean Proc. SPIE 2008 6921 69211E
-
(2008)
Proc. SPIE
, vol.6921
-
-
Gallatin, G.M.1
Naulleau, P.2
Niakoula, D.3
Brainard, R.4
Hassanein, E.5
Matyi, R.6
Thackeray, J.7
Spear, K.8
Dean, K.9
-
39
-
-
79959345348
-
-
T. Wallow C. Higgins R. Brainard K. Petrillo W. Montgomery C.-S. Koay G. Denbeaux O. Wood Y. Wei Proc. SPIE 2008 6921 69211F
-
(2008)
Proc. SPIE
, vol.6921
-
-
Wallow, T.1
Higgins, C.2
Brainard, R.3
Petrillo, K.4
Montgomery, W.5
Koay, C.-S.6
Denbeaux, G.7
Wood, O.8
Wei, Y.9
-
46
-
-
59949096597
-
-
E. Slot M. J. Wieland G. de Boer P. Kruit G. F. ten Berge A. M. C. Houkes R. Jager T. van de Peut J. J. M. Peijster S. W. H. K. Steenbrink T. F. Teepen A. H. V. van Veen B. J. Kampherbeek Proc. SPIE 2008 6921 69211P-1
-
(2008)
Proc. SPIE
, vol.6921
-
-
Slot, E.1
Wieland, M.J.2
De Boer, G.3
Kruit, P.4
Ten Berge, G.F.5
Houkes, A.M.C.6
Jager, R.7
Van De Peut, T.8
Peijster, J.J.M.9
Steenbrink, S.W.H.K.10
Teepen, T.F.11
Van Veen, A.H.V.12
Kampherbeek, B.J.13
-
50
-
-
0029519418
-
-
J. A. Liddle S. D. Berger C. J. Biddick M. I. Blakey K. J. Bolan S. W. Bowler K. Brady R. M. Camarda W. F. Connelly A. Crorken J. Custy R. C. Farrow J. A. Felker L. A. Fetter B. Freeman L. R. Harriott L. Hopkins H. A. Huggins C. S. Knurek J. A. Kraus D. A. Mixon M. M. Mkrtchyan A. E. Novembre M. L. Peabody W. M. Simpson R. G. Tarascon H. H. Wade W. K. Waskiewicz G. P. Watson J. K. Williams D. L. Windt Jpn. J. Appl. Phys. 1995 34 6663
-
(1995)
Jpn. J. Appl. Phys.
, vol.34
, pp. 6663
-
-
Liddle, J.A.1
Berger, S.D.2
Biddick, C.J.3
Blakey, M.I.4
Bolan, K.J.5
Bowler, S.W.6
Brady, K.7
Camarda, R.M.8
Connelly, W.F.9
Crorken, A.10
Custy, J.11
Farrow, R.C.12
Felker, J.A.13
Fetter, L.A.14
Freeman, B.15
Harriott, L.R.16
Hopkins, L.17
Huggins, H.A.18
Knurek, C.S.19
Kraus, J.A.20
Mixon, D.A.21
Mkrtchyan, M.M.22
Novembre, A.E.23
Peabody, M.L.24
Simpson, W.M.25
Tarascon, R.G.26
Wade, H.H.27
Waskiewicz, W.K.28
Watson, G.P.29
Williams, J.K.30
Windt, D.L.31
more..
-
51
-
-
59949083038
-
-
P. Petric C. Bevis A. Carroll H. Percy M. Zywno K. Standiford A. Brodie N. Bareket L. Grella J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom. 2009 27 161
-
(2009)
J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom.
, vol.27
, pp. 161
-
-
Petric, P.1
Bevis, C.2
Carroll, A.3
Percy, H.4
Zywno, M.5
Standiford, K.6
Brodie, A.7
Bareket, N.8
Grella, L.9
-
54
-
-
0035272354
-
-
J. A. Liddle M. I. Blakey K. Bolan R. C. Farrow G. M. Gallatin R. Kasica V. Katsap C. S. Knurek J. Li M. M. Mkrtchyan A. E. Novembre L. Ocola P. A. Orphanos M. L. Peabody S. T. Stanton K. Teffeau W. K. Waskiewicz E. Munro J. Vac. Sci. Technol., B 2001 19 476
-
(2001)
J. Vac. Sci. Technol., B
, vol.19
, pp. 476
-
-
Liddle, J.A.1
Blakey, M.I.2
Bolan, K.3
Farrow, R.C.4
Gallatin, G.M.5
Kasica, R.6
Katsap, V.7
Knurek, C.S.8
Li, J.9
Mkrtchyan, M.M.10
Novembre, A.E.11
Ocola, L.12
Orphanos, P.A.13
Peabody, M.L.14
Stanton, S.T.15
Teffeau, K.16
Waskiewicz, W.K.17
Munro, E.18
-
55
-
-
19944431429
-
-
K. Suzuki N. Hirayanagi T. Fujiwara A. Yamada J. Ikeda T. Yahiro S. Kojima J. Udagawa H. Yamamoto N. Katakura M. Suzuki T. Aoyama H. Takekoshi T. Umemoto H. Shimizu S. Fukui S. Suzuki T. Okino Y. Ohkubo T. Shimoda T. Tanida Y. Watanabe Y. Kohama K. Ohmori F. Mori S. Takemoto T. Yoshioka H. Hirose K. Morita K. Hada S. Kawata Y. Kakizaki T. Miura J. Vac. Sci. Technol., B 2004 22 2885
-
(2004)
J. Vac. Sci. Technol., B
, vol.22
, pp. 2885
-
-
Suzuki, K.1
Hirayanagi, N.2
Fujiwara, T.3
Yamada, A.4
Ikeda, J.5
Yahiro, T.6
Kojima, S.7
Udagawa, J.8
Yamamoto, H.9
Katakura, N.10
Suzuki, M.11
Aoyama, T.12
Takekoshi, H.13
Umemoto, T.14
Shimizu, H.15
Fukui, S.16
Suzuki, S.17
Okino, T.18
Ohkubo, Y.19
Shimoda, T.20
Tanida, T.21
Watanabe, Y.22
Kohama, Y.23
Ohmori, K.24
Mori, F.25
Takemoto, S.26
Yoshioka, T.27
Hirose, H.28
Morita, K.29
Hada, K.30
Kawata, S.31
Kakizaki, Y.32
Miura, T.33
more..
-
59
-
-
79960199813
-
-
D. M. Eigler, http://www.almaden.ibm.com/st/past-projects/molecule- cascades/
-
-
-
Eigler, D.M.1
-
61
-
-
72849140981
-
-
J. N. Randall J. W. Lyding S. Schmucker J. R. Von Ehr J. Ballard R. Saini H. Xu Y. Ding J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom. 2009 27 2764
-
(2009)
J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom.
, vol.27
, pp. 2764
-
-
Randall, J.N.1
Lyding, J.W.2
Schmucker, S.3
Von Ehr, J.R.4
Ballard, J.5
Saini, R.6
Xu, H.7
Ding, Y.8
-
66
-
-
77956451071
-
-
F. Huo G. Zheng X. Liao L. R. Giam J. Chai X. Chen W. Shim C. A. Mirkin Nat. Nanotechnol. 2010 5 637
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 637
-
-
Huo, F.1
Zheng, G.2
Liao, X.3
Giam, L.R.4
Chai, J.5
Chen, X.6
Shim, W.7
Mirkin, C.A.8
-
70
-
-
10844291014
-
-
F. Hua Y. Sun A. Gaur M. A. Meitl L. Bilhaut L. Rotkina J. Wang P. Geil M. Shim J. A. Rogers A. Shim Nano Lett. 2004 4 2467
-
(2004)
Nano Lett.
, vol.4
, pp. 2467
-
-
Hua, F.1
Sun, Y.2
Gaur, A.3
Meitl, M.A.4
Bilhaut, L.5
Rotkina, L.6
Wang, J.7
Geil, P.8
Shim, M.9
Rogers, J.A.10
Shim, A.11
-
72
-
-
18644385860
-
Subresolution assist feature implementation for high-performance logic gate-level lithography
-
A. H. Gabor J. A. Bruce W. Chu R. A. Ferguson C. A. Fonseca R. L. Gordon K. R. Jantzen M. Khare M. A. Lavin W.-H. Lee L. W. Liebmann K. P. Muller J. H. Rankin P. Varekamp F. X. Zach Subresolution assist feature implementation for high-performance logic gate-level lithography Proc. SPIE 2002 4691 418
-
(2002)
Proc. SPIE
, vol.4691
, pp. 418
-
-
Gabor, A.H.1
Bruce, J.A.2
Chu, W.3
Ferguson, R.A.4
Fonseca, C.A.5
Gordon, R.L.6
Jantzen, K.R.7
Khare, M.8
Lavin, M.A.9
Lee, W.-H.10
Liebmann, L.W.11
Muller, K.P.12
Rankin, J.H.13
Varekamp, P.14
Zach, F.X.15
-
74
-
-
77953305689
-
-
D. J. Resnick G. Haase L. Singh D. Curran G. M. Schmid K. Luo C. Brooks K. Selinidis J. Fretwell S. V. Sreenivasan Proc. SPIE 2010 7637 76370R
-
(2010)
Proc. SPIE
, vol.7637
-
-
Resnick, D.J.1
Haase, G.2
Singh, L.3
Curran, D.4
Schmid, G.M.5
Luo, K.6
Brooks, C.7
Selinidis, K.8
Fretwell, J.9
Sreenivasan, S.V.10
-
75
-
-
14944377048
-
-
J. Choi K. Nordquist A. Cherala L. Casoose K. Gehoski W. J. Dauksher S. V. Sreenivasan D. J. Resnick Microelectron. Eng. 2005 78-79 633
-
(2005)
Microelectron. Eng.
, vol.78-79
, pp. 633
-
-
Choi, J.1
Nordquist, K.2
Cherala, A.3
Casoose, L.4
Gehoski, K.5
Dauksher, W.J.6
Sreenivasan, S.V.7
Resnick, D.J.8
-
78
-
-
71049191532
-
-
Y. Shiroishi K. Fukuda I. Tagawa H. Iwasaki S. Takenoiri H. Tanaka H. Mutoh N. Yoshikawa IEEE Trans. Magn. 2009 45 3816
-
(2009)
IEEE Trans. Magn.
, vol.45
, pp. 3816
-
-
Shiroishi, Y.1
Fukuda, K.2
Tagawa, I.3
Iwasaki, H.4
Takenoiri, S.5
Tanaka, H.6
Mutoh, H.7
Yoshikawa, N.8
-
81
-
-
33744786540
-
-
G. M. Schmid M. D. Stewart J. Wetzel F. Palmieri J. Hao Y. Nishimura K. Jen E. K. Kim D. J. Resnick J. A. Liddle C. G. Willson J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom. 2006 24 1283
-
(2006)
J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom.
, vol.24
, pp. 1283
-
-
Schmid, G.M.1
Stewart, M.D.2
Wetzel, J.3
Palmieri, F.4
Hao, J.5
Nishimura, Y.6
Jen, K.7
Kim, E.K.8
Resnick, D.J.9
Liddle, J.A.10
Willson, C.G.11
-
83
-
-
77953309419
-
-
A. Jeans M. Almanza-Workman R. Cobene R. Elder R. Garcia F. Gomez-Pancorbo W. Jackson M. Jam H.-J. Kim O. Kwon H. Luo J. Maltabes P. Mei C. Perlov M. Smith C. Taussig F. Jeffrey S. Braymen J. Hauschildt K. Junge D. Larson D. Stieler Proc. SPIE 2010 7637 19-1
-
(2010)
Proc. SPIE
, vol.7637
, pp. 19-1
-
-
Jeans, A.1
Almanza-Workman, M.2
Cobene, R.3
Elder, R.4
Garcia, R.5
Gomez-Pancorbo, F.6
Jackson, W.7
Jam, M.8
Kim, H.-J.9
Kwon, O.10
Luo, H.11
Maltabes, J.12
Mei, P.13
Perlov, C.14
Smith, M.15
Taussig, C.16
Jeffrey, F.17
Braymen, S.18
Hauschildt, J.19
Junge, K.20
Larson, D.21
Stieler, D.22
more..
-
95
-
-
79960156740
-
-
Assuming The Density Of The Particles Is On The Order Of The Density Of Water Then Per Day ≈ Cm3 Per Day. If The Particles Are On Average 500 Nm Thick Then Per Day Is Equivalent To About 10-3 M2 S-1 Which Is Close To The Standard Photolithography Today g 50 50 g 50
-
T. Knutson, B. Maynor, Z Zhou, K. Chenet, Assuming the density of the particles is on the order of the density of water then 50 g per day ≈ 50 cm3 per day. If the particles are on average 500 nm thick then 50 g per day is equivalent to about 10-3 m2 s-1 which is close to the standard photolithography today, http://www.liquidia.com/Publications.html
-
-
-
Knutson, T.1
Maynor, B.2
Zhou, Z.3
Chenet, K.4
-
96
-
-
69549125741
-
-
ISBN: 978-0-470-09957-5, ed J. A. Rogers, and H. H. Lee, John Wiley and Sons, The only exception to this level of deterministic control is literally on the atomic scale. To make a CMOS transistor requires doping with either electron donor or acceptor atoms and to date this process is statistical and not deterministic. This statistical distribution of dopant atoms is in fact becoming an issue in IC manufacturing
-
P. Maury, D. N. Reinhoudt and J. Juskens, in Unconventional Nanopatterning Techniques and Applications, ed, J. A. Rogers,, and, H. H. Lee,, John Wiley and Sons, 2009, ISBN: 978-0-470-09957-5
-
(2009)
Unconventional Nanopatterning Techniques and Applications
-
-
Maury, P.1
Reinhoudt, D.N.2
Juskens, J.3
-
101
-
-
70350215666
-
-
J. Y. Cheng A. Nelson C. T. Rettner D. P. Sanders A. Sutherland J. W. Pitera Y.-H. Na H. C. Kim W. D. Hinsberg J. Photopolym. Sci. Technol. 2009 22 219
-
(2009)
J. Photopolym. Sci. Technol.
, vol.22
, pp. 219
-
-
Cheng, J.Y.1
Nelson, A.2
Rettner, C.T.3
Sanders, D.P.4
Sutherland, A.5
Pitera, J.W.6
Na, Y.-H.7
Kim, H.C.8
Hinsberg, W.D.9
-
104
-
-
49649099742
-
-
R. Ruiz H. M. Kang F. A. Detcheverry E. Dobisz D. S. Kercher T. R. Albrecht J. J. de Pablo P. F. Nealey Science 2008 321 936
-
(2008)
Science
, vol.321
, pp. 936
-
-
Ruiz, R.1
Kang, H.M.2
Detcheverry, F.A.3
Dobisz, E.4
Kercher, D.S.5
Albrecht, T.R.6
De Pablo, J.J.7
Nealey, P.F.8
-
105
-
-
77957103274
-
-
D. P. Sanders J. Cheng C. T. Rettner W. D. Hinsberg H.-C. Kim H. Truong A. Friz S. Harrer S. Holmes M. Colburn J. Photopolym. Sci. Technol. 2010 23 11
-
(2010)
J. Photopolym. Sci. Technol.
, vol.23
, pp. 11
-
-
Sanders, D.P.1
Cheng, J.2
Rettner, C.T.3
Hinsberg, W.D.4
Kim, H.-C.5
Truong, H.6
Friz, A.7
Harrer, S.8
Holmes, S.9
Colburn, M.10
-
106
-
-
37149056769
-
-
M. P. Stoykovich H. M. Kang K. C. Daoulas G. Liu C.-C. Liu J. J. de Pablo M. Muller P. F. Nealey ACS Nano 2007 1 168
-
(2007)
ACS Nano
, vol.1
, pp. 168
-
-
Stoykovich, M.P.1
Kang, H.M.2
Daoulas, K.C.3
Liu, G.4
Liu, C.-C.5
De Pablo, J.J.6
Muller, M.7
Nealey, P.F.8
-
109
-
-
73849098304
-
-
P. A. Mistark S. Park S. E. Yalcin D. H. Lee O. Yavuzcetin M. T. Tuominen T. P. Russell M. Acherman ACS Nano 2009 3 3987
-
(2009)
ACS Nano
, vol.3
, pp. 3987
-
-
Mistark, P.A.1
Park, S.2
Yalcin, S.E.3
Lee, D.H.4
Yavuzcetin, O.5
Tuominen, M.T.6
Russell, T.P.7
Acherman, M.8
-
114
-
-
77957736715
-
-
H. Arora P. Du K. W. Tan J. K. Hyun J. Grazul H. L. Xin D. A. Muller M. O. Thompson U. Wiesner Science 2010 330 214
-
(2010)
Science
, vol.330
, pp. 214
-
-
Arora, H.1
Du, P.2
Tan, K.W.3
Hyun, J.K.4
Grazul, J.5
Xin, H.L.6
Muller, D.A.7
Thompson, M.O.8
Wiesner, U.9
-
115
-
-
35148819669
-
-
B. Bunday P. Lipscomb J. Allgair D. Patel M. Caldwell E. Solecky C. Archie J. Morningstar B. J. Rice B. Singh J. Cain I. Emami B. Banke A. Herrera V. Ukraintsev J. Schlessinger J. Ritchison Proc. SPIE 2007 6518 65181K
-
(2007)
Proc. SPIE
, vol.6518
-
-
Bunday, B.1
Lipscomb, P.2
Allgair, J.3
Patel, D.4
Caldwell, M.5
Solecky, E.6
Archie, C.7
Morningstar, J.8
Rice, B.J.9
Singh, B.10
Cain, J.11
Emami, I.12
Banke, B.13
Herrera, A.14
Ukraintsev, V.15
Schlessinger, J.16
Ritchison, J.17
-
117
-
-
37149008033
-
-
S. H. Ahn J.-S. Kim L. J. Guo J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom. 2007 25 2388
-
(2007)
J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom.
, vol.25
, pp. 2388
-
-
Ahn, S.H.1
Kim, J.-S.2
Guo, L.J.3
-
121
-
-
79551625581
-
A paradigm shift in scatterometry-based metrology solution addressing the most stringent needs of today as well as future lithography
-
C. M. Ke V. Shih J. Huang L. J. Chen W. Wang G. T. Huang W. T. Yang S. Wang C. R. Liang H. H. Liu H. J. Lee L. G. Terng T. S. Gau J. Lin K. Bhattacharyya M. van der Schaar N. Wright M. Noot M. Shahrjerdy V. Wang S. Lin J. Wu S. Peng G. Liu W.-S. Tzeng J. Chen A. Fuchs O. Adam C. Wang A paradigm shift in scatterometry-based metrology solution addressing the most stringent needs of today as well as future lithography Proc SPIE 2010 7638 76383P
-
(2010)
Proc SPIE
, vol.7638
-
-
Ke, C.M.1
Shih, V.2
Huang, J.3
Chen, L.J.4
Wang, W.5
Huang, G.T.6
Yang, W.T.7
Wang, S.8
Liang, C.R.9
Liu, H.H.10
Lee, H.J.11
Terng, L.G.12
Gau, T.S.13
Lin, J.14
Bhattacharyya, K.15
Van Der Schaar, M.16
Wright, N.17
Noot, M.18
Shahrjerdy, M.19
Wang, V.20
Lin, S.21
Wu, J.22
Peng, S.23
Liu, G.24
Tzeng, W.-S.25
Chen, J.26
Fuchs, A.27
Adam, O.28
Wang, C.29
more..
-
124
-
-
72849109195
-
-
T. Hofmann E. Dobisz B. M. Ocko J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom. 2009 27 3238
-
(2009)
J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom.
, vol.27
, pp. 3238
-
-
Hofmann, T.1
Dobisz, E.2
Ocko, B.M.3
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