Resist requirements and limitations for nanoscale electron-beam patterning

Materials Research Society Symposium - Proceedings

Volumn 739, Issue , 2002, Pages 19-30

  Liddle, J Alexander ^a   Gallatin, Gregg M ^b   Ocola, Leonidas E ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ETCHING; NANOTECHNOLOGY; PROJECTION SYSTEMS; SENSITIVITY ANALYSIS;

ELECTRON-BEAM PATTERNING;

ELECTRON BEAMS;

EID: 0042121323     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (38)

1. F. Abboud, Ki-Ho Baik, V. Chakarian, D. Cole, J. Daniel, R. Dean, M. Gesley, Maiying Lu, R. Naber, T. Newman, F. Raymond, D. Trost, M. Wiltse, W. DeVore, Proc. SPIE 4562, 1 (2002).
2. J.A. Liddle, L.R. Harriott and W.K. Waskiewicz, Microlithography World, 6, 15 (1997).
3. S. D. Golladay, H. C. Pfeiffer, J. D. Rockrohr, and W. Stickel, J. Vac. Sci. Technol., B18, 3072 (2000).
4. R.L. Brainard, G.G. Barclay, E.H. Anderson, L.E. Ocola, Microelectronic Engineering, 61-62, 707 (2002)
5. Y. Ohnishi, M. Mizuko, H. Gokan and S. Fujiwara, J. Vac. Sci. Technol., 19, 1141 (1981).
6. R. Kunz et al., Proc. SPIE 2724, 365 (1996).
7. th EIPBN meeting.
8. M.J. Bowden, L.F. Thompson and J.P. Ballantyne, J. Vac. Sci. Technol., 12, 1294 (1975).
9. L.F. Thompson, J.P. Ballantyne and E.D. Feit, M.J. Bowden, L.F. Thompson and J.P. Ballantyne, J. Vac. Sci. Technol., 12, 1280 (1975).
10. R.D. Allen, W.E. Conley and R.R. Kunz, in Microlithography, Micromachining and Microfabrication, edited by P. Rai-Choudhury (SPIE Optical Engineering Press, Bellingahm, 1997), p. 321.
11. M. M. Mkrtchyan, J. A. Liddle, S. D. Berger, L. R. Harriott, J. M. Gibson and A. M. Schwartz, J. of Appl. Phys., 78, 6888 (1995).
12. M. M. Mkrtchyan, J. A. Liddle, S. T. Stanton, E. Munro, W. K. Waskiewicz, Microelectronic Engineering, 53, 299 (2000).
13. N. Fares, S. Stanton, J. Liddle and G. Gallatin, J. Vac. Sci. Technol., B18, 3115 (2000).
14. S.T. Stanton, Proc. SPIE, 4343, 138 (2001).
15. K. Okamato, K. Suzuki, H. Pfeiffer and M. Sogard, Solid State Technol., May, 118 (2000)
16. B.H. Koek, T. Chisholm, A.J. van Run, J. Romijn, J.P. Davey, Microelectronic Engineering, 23, 81 (1994).
17. M. Mkrtchyan, G. Gallatin, A. Liddle, X. Zhu, E. Munro, W. Waskiewicz, D. Muller, Microelectronic Engineering, 57-58, 277 (2001).
18. H.I. Smith, J. Vac. Sci. Technol., B4, 148 (1986).
19. G.M. Gallatin and J.A. Liddle, Microelecronic Engineering., 46 365 (1999)
20. S. Tagawa, S. Nagahara, Y. Yamamoto, D. Werst and A.D. Trifunac, Proc. SPIE 3999, 204 (2000).
21. A. Saeki, T. Kozawa, Y. Yoshida and S. Tagawa, Jpn. J. Appl. Phys. 41, 4213 (2002)
22. G.M. Gallatin, Proc. SPIE, 4404, 123 (2001).
23. F.A. Houle, W.D. Hinsberg, M.I. Sanchez and J.A. Hoffnagle, J. Vac. Sci. Technol., B20, 924 (2002).
24. W.D. Hinsberg, F.A. Houle, M.I. Sanchez and G.M. Wallraff, IBM J. Res. & Dev. 45, 667 (2001).
25. L.E. Ocola, Mat. Res. Soc. Symp. Proc., 705, Y.1.1.1 (2002)
26. F. A. Houle, W. D. Hinsberg, M. Morrison, M. I. Sanchez, G. Wallraff, C. Larson, and J. Hoffnagle, J. Vac. Sci. Technol., B18, 1874 (2000).
27. E.H. Anderson, D.L. Olynick, W. Chao, B. Harteneck and E. Veklerov, J. Vac. Sci. Technol., B18, 2970 (2000).
28. D.C. Joy, Microelectronic Engineering, 1, 103 (1983).
29. L.E. Ocola, Microelectronic Engineering, 53, 433 (2000).
30. D.C. Joy, http://web.utk.edu/̃srcutk/htm/interact.htm
31. D.R. Allee, C.P. Umbach and A.N. Broers, J. Vac. Sci. Technol., B9, 2838 (1991).
32. J.M. Macaulay "The production of nanometre structures in inorganic materials by electron beams of high current density", Ph.D. dissertation, University of Cambridge (1989).
33. J.M. Macaulay, R.M. Allen, L.M. Brown, S.D. Berger, Microelectronic Engineering, 9, 57 (1989)
34. A.N. Broers, Proc. R. Soc. Lond. A, 416, 1 (1988).
35. A.N. Broers, Phil. Trans. R. Soc. Lond. A, 353, 291 (1995).
36. M. Williamson, A. Neureuther, Proc. SPIE, 3999, 1189 (2000).
37. M. Sato, L.E. Ocola, A.E. Novembre, K. Ohmori, K. Ishikawa, K. Katsumata and T. Nakayama, J. Vac. Sci. Technol., B17, 2873 (1999).
38. K.E. Gonsalves, L. Merhari, H. Wu, and Y. Hu, Advanced Materials, 13, 703 (2001).