Sub-resolution assist feature implementation for high performance logic gate-level lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 I, Issue , 2002, Pages 418-425

  Gabor, Allen ^a   Bruce, James ^a   Chu, William ^a   Ferguson, Rich ^a   Fonseca, Carlos ^a   Gordon, Ronald ^a   Jantzen, Ken ^a   Khare, Mukesh ^a   Lavin, Mark ^a   Lee, Woo Hyeong ^a   Liebmann, Lars ^a   Paul Muller, K ^a   Rankin, Jed ^a   Varekamp, Patrick ^a   Zach, Franz ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATIONS; LENSES; LOGIC GATES; MASKS; SCANNING ELECTRON MICROSCOPY; STATIC RANDOM ACCESS STORAGE;

OPTICAL PROXIMITY CORRECTION (OPC);

PHOTOLITHOGRAPHY;

EID: 18644385860     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474591     Document Type: Conference Paper

References (8)

1. International Technology Roadmap For Semiconductors, 2001 Edition, http://public.itrs.net/.
2. A. Watts and J. Rankin, "Impact of gate linewidth variation on chip performance", Proceedings of ARCH Microlithography Symposium Interface 2000, (2000), 53-67.
3. S. Mansfield, L. Liebmann, A. Molless, and Alfred K. Wong, "Lithographic Comparison of Assist Feature Design Strategies," in Proc. SPIE (C. Progler, ed.), vol 4000, SPIE, 20.
4. J. Bruce, M. Cross, L. Liebmann, S. Mansfield, and A. McGuire, "Assist Features - Challenges and Opportunities", Proceedings of ARCH Microlithography Symposium Interface 2000, (2000).
5. A. Gabor, T. Brunner, J. Chen, N. Chen, S. Deshpande, R. Ferguson, D. Horak, S. Holmes, L. Liebmann, S. Mansfield, A. Molless, C. Progler, P. Rabidoux, D. Ryan, P. Talvi, L. Tsou, B. Vampatella, A. Wong, Q. Yang and C. Yu, "Characterization of Line-Width Variation on 248 and 193 nm Exposure Tools," in Proc. SPIE (C. Progler, ed.), vol 4346, SPIE, 2001.
6. J.F. Chen, K. Wampler, T.L. Laidig, "Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask", US Patent # 5821014, 10/13/1998.
7. M. Levinson, N. Viswanathan, and R. Simpson, "Improving resolution in photolithography with a phase-shifting mask," IEEE Transactions on Electron Devices, vol. 29, pp. 1812-1846, Dec. 1982.
8. L. Liebmann, S. Mansfield, J. Bruce, M. Cross, I. Graur, A. McGuire, J. Krueger, D. Sunderling, "Optimizing style options for sub-resolution assist features," in Proc. SPIE (C. Progler, ed.), vol 4346, SPIE, 2001.