Extension options for 193nm immersion lithography

Journal of Photopolymer Science and Technology

Volumn 22, Issue 5, 2009, Pages 625-634

  Zimmerman, Paul A ^a  

^a INTEL CORPORATION   (United States)

Author keywords

193nm immersion lithograph; Double exposure; Double patterning; Next generation lithography; Non chemically amplified resist

Indexed keywords

EID: 76649112279     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.22.625     Document Type: Article

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