Evaluation of EUV resist materials for use at the 32 nm half-pitch node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Wallow, Thomas ^a   Higgins, Craig ^b   Brainard, Robert ^b   Petrillo, Karen ^c   Montgomery, Warren ^b   Koay, Chiew Seng ^c   Denbeaux, Greg ^b   Wood, Obert ^a   Wei, Yayi ^d,e  

^a ADVANCED MICRO DEVICES   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c IBM   (United States)

^d Qimonda Corporation   (United States)

^e AZ Electronic Materials USA Corp   (United States)

Author keywords

EUV; Extreme ultraviolet lithography; Limits; Performance; Photoresist; Scaling

Indexed keywords

EUV; EXTREME ULTRAVIOLET; LIMITS; PERFORMANCE; SCALING;

EXTREME ULTRAVIOLET LITHOGRAPHY; PHOTORESISTS; TECHNOLOGY;

LITHOGRAPHY;

EID: 79959345348     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772943     Document Type: Conference Paper

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